Electrical Measurement of Cell-to-Cell Variation of Critical Charge in SRAM and Sensitivity to Single-Event Upsets by Low-Energy Protons
Cannon, James M., Loveless, T. Daniel, Estrada, Rafael, Boggs, Ryan, Lawrence, S. P., Santos, Gabriel, McCurdy, Michael W., Sternberg, Andrew L., Reising, Donald R., Finzell, Thomas, Cannon, Ann
Published in IEEE transactions on nuclear science (01.05.2021)
Published in IEEE transactions on nuclear science (01.05.2021)
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Journal Article
Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs
Jin Chen, Puzyrev, Yevgeniy S., Rong Jiang, En Xia Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Arehart, Aaron R., Ringel, Steven A., Saunier, Paul, Lee, Cathy
Published in IEEE transactions on nuclear science (01.12.2015)
Published in IEEE transactions on nuclear science (01.12.2015)
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Journal Article
Evaluation of the Single-Event-Upset Vulnerability for Low-Energy Protons at the 7- and 5-nm Bulk FinFET Nodes
Xiong, Yoni, Pieper, Nicholas J., McCurdy, Michael W., Ball, Dennis R., Sierwaski, Brian D., Bhuva, Bharat L.
Published in IEEE transactions on nuclear science (01.08.2023)
Published in IEEE transactions on nuclear science (01.08.2023)
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Journal Article
Damage Separation in Proton-Irradiated Bipolar Junction Transistors as a Function of Energy
Witczak, Steven C., Schrimpf, Ronald D., Fleetwood, Daniel M., Messenger, Scott R., Langlois, Michael S., McCurdy, Michael W., Rodriguez, John A.
Published in IEEE transactions on nuclear science (01.08.2023)
Published in IEEE transactions on nuclear science (01.08.2023)
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Journal Article
Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes
Sengupta, Arijit, Ball, Dennis R., Witulski, Arthur F., Zhang, En Xia, Schrimpf, Ronald D., Galloway, Kenneth F., Reed, Robert A., Alles, Michael L., McCurdy, Michael W., Sternberg, Andrew L., Johnson III, Robert A., Howell, Mick E., Osheroff, Jason M., Hutson, John M.
Published in IEEE transactions on nuclear science (01.04.2023)
Published in IEEE transactions on nuclear science (01.04.2023)
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Journal Article
Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications
Ives, Nathan E., Jin Chen, Witulski, Arthur F., Schrimpf, Ronald D., Fleetwood, Daniel M., Bruce, Ralph W., McCurdy, Michael W., En Xia Zhang, Massengill, Lloyd W.
Published in IEEE transactions on nuclear science (01.12.2015)
Published in IEEE transactions on nuclear science (01.12.2015)
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Journal Article
1/ f Noise in As-Processed and Proton-Irradiated AlGaN/GaN HEMTs Due to Carrier Number Fluctuations
Pan Wang, Rong Jiang, Jin Chen, En Xia Zhang, McCurdy, Michael W., Schrimpf, Ronald D., Fleetwood, Daniel M.
Published in IEEE transactions on nuclear science (01.01.2017)
Published in IEEE transactions on nuclear science (01.01.2017)
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Journal Article
Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs
Jin Chen, Puzyrev, Yevgeniy S., Cher Xuan Zhang, En Xia Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S.
Published in IEEE transactions on nuclear science (01.12.2013)
Published in IEEE transactions on nuclear science (01.12.2013)
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Journal Article
Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs
Rong Jiang, En Xia Zhang, McCurdy, Michael W., Jin Chen, Xiao Shen, Pan Wang, Fleetwood, Daniel M., Schrimpf, Ronald D., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S., Pantelides, Sokrates T.
Published in IEEE transactions on nuclear science (01.01.2017)
Published in IEEE transactions on nuclear science (01.01.2017)
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Journal Article
LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices
Sengupta, Arijit, Ball, Dennis R., Sternberg, Andrew L., Islam, Sajal, Senarath, Aditha S., Reed, Robert A., McCurdy, Michael W., Zhang, En Xia, Hutson, John M., Alles, Michael L., Osheroff, Jason M., Jacob, Biju, Hitchcock, Collin W., Goswami, Shubhodeep, Schrimpf, Ronald D., Galloway, Kenneth F., Witulski, Arthur F.
Published in IEEE transactions on nuclear science (01.04.2024)
Published in IEEE transactions on nuclear science (01.04.2024)
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Journal Article
The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture
Brewer, Rachel M., Reed, Robert A., Moran, Steven L., Cox, Jonathan, Sierawski, Brian D., McCurdy, Michael W., Zhang, En Xia, Iyer, Subramanian S., Schrimpf, Ronald D., Alles, Michael L.
Published in IEEE transactions on nuclear science (01.01.2020)
Published in IEEE transactions on nuclear science (01.01.2020)
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Journal Article
Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions
Pan Wang, Perini, Christopher J., O'Hara, Andrew, Huiqi Gong, Pengfei Wang, En Xia Zhang, Mccurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Vogel, Eric M.
Published in IEEE transactions on nuclear science (01.01.2019)
Published in IEEE transactions on nuclear science (01.01.2019)
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Journal Article
Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs
Xin Wan, Baker, Oliver K., McCurdy, Michael W., En Xia Zhang, Zafrani, Max, Wainwright, Simon P., Jun Xu, Han Liang Bo, Reed, Robert A., Fleetwood, Daniel M., Ma, T. P.
Published in IEEE transactions on nuclear science (01.01.2017)
Published in IEEE transactions on nuclear science (01.01.2017)
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Journal Article
RF Performance of Proton-Irradiated AlGaN/GaN HEMTs
Jin Chen, En Xia Zhang, Cher Xuan Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S.
Published in IEEE transactions on nuclear science (01.12.2014)
Published in IEEE transactions on nuclear science (01.12.2014)
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Journal Article
Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners
Liao, Wenjun, Zhang, En Xia, Alles, Michael L., Sternberg, Andrew L., Arutt, Charles N., Wang, Dingkang, Zhao, Simeng E., Wang, Pan, McCurdy, Michael W., Xie, Huikai, Fleetwood, Daniel M., Reed, Robert A., Schrimpf, Ronald D.
Published in IEEE transactions on nuclear science (01.08.2018)
Published in IEEE transactions on nuclear science (01.08.2018)
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Journal Article
Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
Gong, Huiqi, Liao, Wenjun, Zhang, En Xia, Sternberg, Andrew L., McCurdy, Michael W., Davidson, Jim L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Shuvra, Pranoy Deb, Lin, Ji-Tzuoh, McNamara, Shamus, Walsh, Kevin M., Alphenaar, Bruce W., Alles, Michael L.
Published in IEEE transactions on nuclear science (01.01.2018)
Published in IEEE transactions on nuclear science (01.01.2018)
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Journal Article
Single-Event Transient Response of InGaAs MOSFETs
Kai Ni, En Xia Zhang, Hooten, Nicholas C., Bennett, William G., McCurdy, Michael W., Sternberg, Andrew L., Schrimpf, Ronald D., Reed, Robert A., Fleetwood, Daniel M., Alles, Michael L., Tae-Woo Kim, Jianqiang Lin, del Alamo, Jesus A.
Published in IEEE transactions on nuclear science (01.12.2014)
Published in IEEE transactions on nuclear science (01.12.2014)
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Journal Article
Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers
Huiqi Gong, Wenjun Liao, En Xia Zhang, Sternberg, Andrew L., McCurdy, Michael W., Davidson, Jim L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Shuvra, Pranoy Deb, Ji-Tzuoh Lin, McNamara, Shamus, Walsh, Kevin M., Alphenaar, Bruce W., Alles, Michael L.
Published in IEEE transactions on nuclear science (01.01.2017)
Published in IEEE transactions on nuclear science (01.01.2017)
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Journal Article