Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies
Ghadi, Hemant, McGlone, Joe F., Cornuelle, Evan, Senckowski, Alexander, Sharma, Shivam, Wong, Man Hoi, Singisetti, Uttam, Frodason, Ymir Kalmann, Peelaers, Hartwin, Lyons, John L., Varley, Joel B., Van de Walle, Chris G., Arehart, Aaron, Ringel, Steven A.
Published in APL materials (01.11.2023)
Published in APL materials (01.11.2023)
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Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors
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Published in IEEE transactions on electron devices (01.01.2021)
Published in IEEE transactions on electron devices (01.01.2021)
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Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
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Published in APL materials (01.02.2020)
Published in APL materials (01.02.2020)
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Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods
Ghadi, Hemant, Cornuelle, Evan, Mcglone, Joe F., Senckowski, Alexander, Sharma, Shivam, Wong, Man Hoi, Singisetti, Uttam, Ringel, Steven A.
Published in APL materials (01.09.2024)
Published in APL materials (01.09.2024)
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Trapping Effects in Si [Formula Omitted]-Doped [Formula Omitted]-Ga2O3 MESFETs on an Fe-Doped [Formula Omitted]-Ga2O3 Substrate
Mcglone, Joe F, Xia, Zhanbo, Zhang, Yuewei, Joishi, Chandan, Lodha, Saurabh, Rajan, Siddharth, Ringel, Steven A, Arehart, Aaron R
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Trapping Effects in Si \delta -Doped \beta -Ga2O3 MESFETs on an Fe-Doped \beta -Ga2O3 Substrate
Mcglone, Joe F., Xia, Zhanbo, Zhang, Yuewei, Joishi, Chandan, Lodha, Saurabh, Rajan, Siddharth, Ringel, Steven A., Arehart, Aaron R.
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3
Ghadi, Hemant, McGlone, Joe F., Cornuelle, Evan, Feng, Zixuan, Zhang, Yuxuan, Meng, Lingyu, Zhao, Hongping, Arehart, Aaron R., Ringel, Steven A.
Published in APL materials (01.10.2022)
Published in APL materials (01.10.2022)
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Trapping Effects in Si -Doped -Ga 2 O 3 MESFETs on an Fe-Doped -Ga 2 O 3 Substrate
Mcglone, Joe F., Xia, Zhanbo, Zhang, Yuewei, Joishi, Chandan, Lodha, Saurabh, Rajan, Siddharth, Ringel, Steven A., Arehart, Aaron R.
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
Kalarickal, Nidhin Kurian, Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, McGlone, Joe F, Moore, Wyatt, Arehart, Aaron R, Ringel, Steven A, Zhao, Hongping, Rajan, Siddharth
Year of Publication 03.06.2020
Year of Publication 03.06.2020
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Probing charge transport and background doping in MOCVD grown (010) ${\beta}$-Ga$_{2}$O$_{3}
Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, Moore, Wyatt, Chen, Zhaoying, McGlone, Joe F, Daughton, David R, Arehart, Aaron R, Ringel, Steven A, Rajan, Siddharth, Zhao, Hongping
Year of Publication 27.04.2020
Year of Publication 27.04.2020
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Journal Article
Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
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Published in arXiv.org (03.06.2020)
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Published in arXiv.org (03.06.2020)
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Probing charge transport and background doping in MOCVD grown (010) \({\beta}\)-Ga\(_{2}\)O\(_{3}\)
Feng, Zixuan, A F M Anhar Uddin Bhuiyan, Xia, Zhanbo, Moore, Wyatt, Chen, Zhaoying, McGlone, Joe F, Daughton, David R, Arehart, Aaron R, Ringel, Steven A, Rajan, Siddharth, Zhao, Hongping
Published in arXiv.org (27.04.2020)
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Published in arXiv.org (27.04.2020)
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