High-k MIM dielectric reliability study in 65nm node
Achanta, Ravi, McGahay, V., Boffoli, S., Kothandaraman, C., Gambino, J.
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
Filippi, R.G., McGrath, J.F., Shaw, T.M., Murray, C.E., Rathore, H.S., McLaughlin, P.S., McGahay, V., Nicholson, L., Wang, P.-C., Lloyd, J.R., Lane, M., Rosenberg, R., Liu, X., Wang, Y.-Y., Landers, W., Spooner, T., Demarest, J.J., Engel, B.H., Gill, J., Goth, G., Barth, E., Biery, G., Davis, C.R., Wachnik, R.A., Goldblatt, R., Ivers, T., Swinton, A., Barile, C., Aitken, J.
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)
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BEOL Integration of Highly Damage -Resistant Porous Ultra Low-K Material Using Direct CMP and Via-first Process
Iijima, T., Lin, Q., Chen, S., Labelle, C., Fuller, N., Ponoth, S., Cohen, S., Lloyd, J., Dunn, D., Muzzy, C., Gill, J., Nitta, S., McGahay, V., Tyberg, C., Spooner, T., Nye, H.
Published in 2006 International Interconnect Technology Conference (2006)
Published in 2006 International Interconnect Technology Conference (2006)
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Electromigration-resistance enhancement with CoWP or CuMn for advanced Cu interconnects
Christiansen, C, Baozhen Li, Angyal, M, Kane, T, McGahay, V, Yun Yu Wang, Shaoning Yao
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Geometry, kinetics, and short length effects of electromigration in Mn doped Cu interconnects at the 32nm technology node
Christiansen, C., Baozhen Li, Angyal, M., Kane, T., McGahay, V., Yun Yu Wang, Shaoning Yao
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
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Characterization, Modeling and Extraction of Cu Wire Resistance for 65 nm Technology
Ning Lu, Angyal, M., Matusiewicz, G., McGahay, V., Standaert, T.
Published in 2007 IEEE Custom Integrated Circuits Conference (01.09.2007)
Published in 2007 IEEE Custom Integrated Circuits Conference (01.09.2007)
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Conference Proceeding
Chip Package Interaction for 65nm CMOS Technology with C4 Interconnections
Farooq, M., Melville, I., Muzzy, C., McLaughlin, P.V., Hannon, R., Sauter, W., Muncy, J., Questad, D., Carey, C., Cullinan-Scholl, M., McGahay, V., Angyal, M., Nye, H., Lane, M., Xiao Hu Liu, Shaw, T., Murray, C.
Published in 2007 IEEE International Interconnect Technology Conferencee (01.06.2007)
Published in 2007 IEEE International Interconnect Technology Conferencee (01.06.2007)
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Conference Proceeding
65nm Cu Integration and Interconnect Reliability in Low Stress K=2.75 SiCOH
McGahay, V., Bonilla, G., Chen, F., Christiansen, C., Cohen, S., Cullinan-Scholl, M., Demarest, J., Dunn, D., Engel, B., Fitzsimmons, J., Gill, J., Grunow, S., Herbst, B., Hichri, H., Ida, K., Klymko, N., Kiene, M., Labelle, C., Lee, T., Liniger, E., Liu, X.H., Madan, A., Malone, K., Martin, J., McLaughlin, P.V., Minami, P., Molis, S., Muzzy, C., Nguyen, S., Patel, J.C., Restaino, D., Sakamoto, A., Shaw, T.M., Shimooka, Y., Shobha, H., Simonyi, E., Widodo, J., Grill, A., Hannon, R., Lane, M., Nye, H., Spooner, T., Wisnieff, R., Ivers, T.
Published in 2006 International Interconnect Technology Conference (2006)
Published in 2006 International Interconnect Technology Conference (2006)
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Conference Proceeding
High-current characterization of dual-damascene copper interconnects in SiO/sub 2/- and low-k interlevel dielectrics for advanced CMOS semiconductor technologies
Voldman, S., Gauthier, R., Morrisseau, K., Hargrove, M., McGahay, V., Gross, V.
Published in 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) (1999)
Published in 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) (1999)
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Conference Proceeding
A modular 0.13 /spl mu/m bulk CMOS technology for high performance and low power applications
Han, L.K., Biesemans, S., Heidenreich, J., Houlihan, K., Lin, C., McGahay, V., Schiml, T., Schmidt, A., Schroeder, U.P., Stetter, M., Wann, C., Warner, D., Mahnkopf, R., Chen, B.
Published in 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) (2000)
Published in 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) (2000)
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Conference Proceeding
Integration of copper with low-k dielectrics for 0.13 /spl mu/m technology
Gambino, J., Stamper, A., McDevitt, T., McGahay, V., Luce, S., Pricer, T., Porth, B., Senowitz, C., Kontra, R., Gibson, M., Wildman, H., Piper, A., Benson, C., Standaert, T., Biolsi, P., Cooney, E.
Published in Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) (2002)
Published in Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) (2002)
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Conference Proceeding
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
Lee, W.-H., Waite, A., Nii, H., Nayfeh, H.M., McGahay, V., Nakayama, H., Fried, D., Chen, H., Black, L., Bolam, R., Cheng, J., Chidambarrao, D., Christiansen, C., Cullinan-Scholl, M., Davies, D.R., Domenicucci, A., Fisher, P., Fitzsimmons, J., Gill, J., Gribelyuk, M., Harmon, D., Holt, J., Ida, K., Kiene, M., Kluth, J., Labelle, C., Madan, A., Malone, K., McLaughlin, P.V., Minami, M., Mocuta, D., Murphy, R., Muzzy, C., Newport, M., Panda, S., Peidous, I., Sakamoto, A., Sato, T., Sudo, G., VanMeer, H., Yamashita, T., Zhu, H., Agnello, P., Bronner, G., Freeman, G., Huang, S.-F., Ivers, T., Luning, S., Miyamoto, K., Nye, H., Pellerin, J., Rim, K., Schepis, D., Spooner, T., Chen, X., Khare, M., Horstmann, M., Wei, A., Kammler, T., Hontschel, J., Bierstedt, H., Engelmann, H.-J., Hellmich, A., Hempel, K., Koerner, G., Neu, A., Otterbach, R., Reichel, C., Trentsch, M., Press, P., Frohberg, K., Schaller, M., Salz, H., Hohage, J., Ruelke, H., Klais, J., Raab, M., Greenlaw, D., Kepler, N.
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
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Conference Proceeding
Integration of copper and fluorosilicate glass for 0.18 /spl mu/m interconnections
Barth, E.P., Ivers, T.H., McLaughlin, P.S., McDonald, A., Levine, E.N., Greco, S.E., Fitzsimmons, J., Melville, I., Spooner, T., DeWan, C., Chen, X., Manger, D., Nye, H., McGahay, V., Biery, G.A., Goldblatt, R.D., Chen, T.C.
Published in Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) (2000)
Published in Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) (2000)
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Conference Proceeding
Process-Induced Gate Oxide Damage Issues in Advanced Plasma Chemical Vapor Deposition Processes
Cote, D., Nguyen, S., Mcgahay, V., Waskiewicz, C., Chang, S., Stamper, A., Weigand, P., Shoda, N., Matsuda, T.
Published in Proceedings of 1st International Symposium on Plasma Process-Induced Damage (1996)
Published in Proceedings of 1st International Symposium on Plasma Process-Induced Damage (1996)
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Conference Proceeding
A 0.18 /spl mu/m high-performance logic technology
Crowder, S., Greco, S., Ng, H., Barth, E., Beyer, K., Biery, G., Connolly, J., DeWan, C., Ferguson, R., Chen, X., Hargrove, M., Nowak, E., McLaughlin, P., Purtell, R., Logan, R., Oberschmidt, J., Ray, A., Ryan, D., Tallman, K., Wagner, T., McGahay, V., Crabbe, E., Agnello, P., Goldblatt, R., Su, L., Davari, B.
Published in 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) (1999)
Published in 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) (1999)
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Conference Proceeding
A high performance 0.13 /spl mu/m SOI CMOS technology with Cu interconnects and low-k BEOL dielectric
Smeys, P., McGahay, V., Yang, I., Adkisson, J., Beyer, K., Bula, O., Chen, Z., Chu, B., Culp, J., Das, S., Eckert, A., Hadel, L., Hargrove, M., Herman, J., Lin, L., Mann, R., Maciejewski, E., Narasimha, S., O'Neil, P., Rauch, S., Ryan, D., Toomey, J., Tsou, L., Varekamp, P., Wachnik, R., Wagner, T., Wu, S., Yu, C., Agnello, P., Connolly, J., Crowder, S., Davis, C., Ferguson, R., Sekiguchi, A., Su, L., Goldblatt, R., Chen, T.C.
Published in 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) (2000)
Published in 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) (2000)
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Conference Proceeding
Gate Material Dependence Of Process Charging Damage In Thin Gate Oxide
Acovic, A., Ray, A., Sun, J., Herman, J., Furukawa, T., Geiger, R., Beyer, K., McGahay, V., Greco, S., Abadeer, W.
Published in Proceedings of 1st International Symposium on Plasma Process-Induced Damage (1996)
Published in Proceedings of 1st International Symposium on Plasma Process-Induced Damage (1996)
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