Channel-Stress Enhancement Characteristics for Scaled pMOSFETs by Using Damascene Gate With Top-Cut Compressive Stress Liner and eSiGe
Mayuzumi, S., Yamakawa, S., Kosemura, D., Takei, M., Tateshita, Y., Wakabayashi, H., Tsukamoto, M., Ohno, T., Ogura, A., Nagashima, N.
Published in IEEE transactions on electron devices (01.11.2009)
Published in IEEE transactions on electron devices (01.11.2009)
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Journal Article
High-Performance Metal/High- k n- and p-MOSFETs With Top-Cut Dual Stress Liners Using Gate-Last Damascene Process on (100) Substrates
Mayuzumi, S., Yamakawa, S., Tateshita, Y., Hirano, T., Nakata, M., Yamaguchi, S., Tai, K., Wakabayashi, H., Tsukamoto, M., Nagashima, N.
Published in IEEE transactions on electron devices (01.04.2009)
Published in IEEE transactions on electron devices (01.04.2009)
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Journal Article
High-Performance Metal/High-[Formula Omitted] n- and p-MOSFETs With Top-Cut Dual Stress Liners Using Gate-Last Damascene Process on (100) Substrates
Mayuzumi, S, Yamakawa, S, Tateshita, Y, Hirano, T, Nakata, M, Yamaguchi, S, Tai, K, Wakabayashi, H, Tsukamoto, M, Nagashima, N
Published in IEEE transactions on electron devices (01.04.2009)
Published in IEEE transactions on electron devices (01.04.2009)
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Journal Article
Evaluation of local strain in Si using UV-Raman spectroscopy
Ogura, Atsushi, Kosemura, Daisuke, Takei, Munehisa, Uchida, Hidetsugu, Hattori, Nobuyoshi, Yoshimaru, Masaki, Mayuzumi, Satoru, Wakabayashi, Hitoshi
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.03.2009)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.03.2009)
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Journal Article
Stress enhancement concept on replacement gate technology with top-cut stress liner for nFETs
Yamakawa, S., Mayuzumi, S., Tateshita, Y., Wakabayashi, H., Ansai, H.
Published in ESSDERC 2008 - 38th European Solid-State Device Research Conference (01.09.2008)
Published in ESSDERC 2008 - 38th European Solid-State Device Research Conference (01.09.2008)
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Conference Proceeding
Comparison of groupings among members of the genus Aspergillus based on phylogeny and production of bioactive compounds
Anzai, K.(National Inst. of Technology and Evaluation, Kisarazu, Chiba (Japan)), Mayuzumi, S, Nakashima, T, Sato, H, Inaba, S, Park, J.Y, Kuwahara, N, Suzuki, R, Utsumi, N, Yokoyama, F, Ohfuku, Y, Ando, K
Published in Bioscience, biotechnology, and biochemistry (01.08.2008)
Published in Bioscience, biotechnology, and biochemistry (01.08.2008)
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Journal Article
Cross-Sectional UV-Raman Measurement for Obtaining Two-Dimensional Channel Stress Profile in Extremely High-Performance pMOSFETs
Akamatsu, Hiroaki, Takei, Munehisa, Kosemura, Daisuke, Nagata, Kohki, Mayuzumi, Satoru, Yamakawa, Shinya, Wakabayashi, Hitoshi, Ogura, Atsushi
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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Journal Article
Study of stress effect on replacement gate technology with compressive stress liner and eSiGe for pFETs
Yamakawa, S., Mayuzumi, S., Wang, J., Tateshita, Y., Wakabayashi, H., Ohno, T., Ansai, H., Kosemura, D., Takei, M., Ogura, A.
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2008)
Published in 2008 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2008)
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Conference Proceeding
Production of bioactive compounds based on phylogeny in the genus Penicillium preserved at NBRC
Nakashima, T.(National Inst. of Technology and Evaluation, Kisarazu, Chiba (Japan)), Mayuzumi, S, Inaba, S, Park, J.Y, Anzai, K, Suzuki, R, Kuwahara, N, Utsumi, N, Yokoyama, F, Sato, H, Okane, I, Tsurumi, Y, Ando, K
Published in Bioscience, biotechnology, and biochemistry (01.11.2008)
Published in Bioscience, biotechnology, and biochemistry (01.11.2008)
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Journal Article
Channel-stress study on gate-size effects for damascene-Gate pMOSFETs with top-cut compressive stress liner and eSiGe
Mayuzumi, S., Yamakawa, S., Kosemura, D., Takei, M., Wang, J., Ando, T., Tateshita, Y., Tsukamoto, M., Wakabayashi, H., Ohno, T., Ogura, A., Nagashima, N.
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Published in 2008 Symposium on VLSI Technology (01.06.2008)
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Conference Proceeding
Comparative study between Si (110) and (100) substrates on mobility and velocity enhancements for short-channel highly-strained PFETs
Mayuzumi, S., Yamakawa, S., Kosemura, D., Takei, M., Nagata, K., Akamatsu, H., Aamari, K., Tateshita, Y., Wakabayashi, H., Tsukamoto, M., Ohno, T., Saitoh, M., Ogura, A., Nagashima, N.
Published in 2009 Symposium on VLSI Technology (01.06.2009)
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Published in 2009 Symposium on VLSI Technology (01.06.2009)
Conference Proceeding
Extreme High-Performance n- and p-MOSFETs Boosted by Dual-Metal/High-k Gate Damascene Process using Top-Cut Dual Stress Liners on (100) Substrates
Mayuzumi, S., Wang, J., Yamakawa, S., Tateshita, Y., Hirano, T., Nakata, M., Yamaguchi, S., Yamamoto, Y., Miyanami, Y., Oshiyama, I., Tanaka, K., Tai, K., Ogawa, K., Kugimiya, K., Nagahama, Y., Hagimoto, Y., Yamamoto, R., Kanda, S., Nagano, K., Wakabayashi, H., Tagawa, Y., Tsukamoto, M., Iwamoto, H., Saito, M., Kadomura, S., Nagashima, N.
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
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Conference Proceeding
Stress-enhancement technique in narrowing NMOSFETs with damascene-gate process and tensile liner
Mayuzumi, S., Yamakawa, S., Tateshita, Y., Tsukamoto, M., Wakabayashi, H., Ohno, T., Nagashima, N.
Published in 2009 International Symposium on VLSI Technology, Systems, and Applications (01.04.2009)
Published in 2009 International Symposium on VLSI Technology, Systems, and Applications (01.04.2009)
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Conference Proceeding
Charging member, process cartridge, and electrophotographic image formation device
Suzumura Noriko, Doi Noriyuki, Kodama Masataka, Takeno Kineo, Yamauchi Kenichi, Mayuzumi Hiroshi, Masu Hiroki
Year of Publication 10.08.2016
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Year of Publication 10.08.2016
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