Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology
Ortolland, C., Rosseel, E., Horiguchi, N., Kerner, C., Mertens, S., Kittl, J., Verleysen, E., Bender, H., Vandervost, W., Lauwers, A., Absil, P.P., Biesemans, S., Muthukrishnan, S., Srinivasan, S., Mayur, A.J., Schreutelkamp, R., Hoffmann, T.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
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Advances on 32nm NiPt Salicide process
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Published in 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (01.09.2009)
Published in 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (01.09.2009)
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Local modes of substitutional transition metal ions in II–VI semiconductors
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Published in Solid state communications (01.09.1994)
Published in Solid state communications (01.09.1994)
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Journal Article
Characterization of Nickel Silicides Produced by Millisecond Anneals
Adams, B., Jennings, D., Kai Ma, Mayur, A.J., Moffatt, S., Nagy, S.G., Parihar, V.
Published in 2007 15th International Conference on Advanced Thermal Processing of Semiconductors (01.10.2007)
Published in 2007 15th International Conference on Advanced Thermal Processing of Semiconductors (01.10.2007)
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Conference Proceeding
Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium
Itoh, KM, Muto, J, Walukiewicz, W, Beeman, JW, Haller, EE, Kim, H, Mayur, AJ, Sciacca, MD, Ramdas, AK, Buczko, R, Farmer, JW, Ozhogin, VI, VI
Published in Physical review. B, Condensed matter (15.03.1996)
Published in Physical review. B, Condensed matter (15.03.1996)
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