Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs
Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A., Usikova, A.A.
Published in Infrared physics & technology (01.09.2021)
Published in Infrared physics & technology (01.09.2021)
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Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias
Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A.
Published in Infrared physics & technology (01.12.2020)
Published in Infrared physics & technology (01.12.2020)
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Morphology and redispersibility of silver nanoparticles prepared by chemical reduction
Lukhmyrina, T S, Shestakov, M S, Shvidchenko, A V, Matveev, B A
Published in Journal of physics. Conference series (01.12.2020)
Published in Journal of physics. Conference series (01.12.2020)
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Journal Article
InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths
Il'inskaya, N.D, Karandashev, S.A, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A
Published in Technical physics (01.02.2018)
Published in Technical physics (01.02.2018)
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Journal Article
P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction
Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.01.2018)
Published in Infrared physics & technology (01.01.2018)
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Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–237]
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Journal Article
InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.11.2015)
Published in Infrared physics & technology (01.11.2015)
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Journal Article
InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.11.2015)
Published in Infrared physics & technology (01.11.2015)
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Journal Article
Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure
Il'inskaya, N.D, Karandashev, S.A, Karpukhina, N.G, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
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Journal Article
P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.09.2016)
Published in Infrared physics & technology (01.09.2016)
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Journal Article
Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs
Kuusela, T., Peura, J., Matveev, B.A., Remennyy, M.A., Stus’, N.M.
Published in Vibrational spectroscopy (10.11.2009)
Published in Vibrational spectroscopy (10.11.2009)
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Journal Article
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
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Journal Article
Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Journal Article
P-InAsSbP/[n.sup.0]-InAs/[n.sup.+]-InAs photodiodes for operation at moderate cooling
Brunkov, P.N, Il'inskaya, N.D, Karandashev, S.A, Latnikova, N.M, Lavrov, A.A, Matveev, B.A, Petrov, A.S, Remennyi, M.A, Sevostyanov, E.N, Stus, N.M
Published in Semiconductors (Woodbury, N.Y.) (01.10.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2014)
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Nonuniformity in the spatial distribution of negative luminescence in InAsSb
Karandashev, S.A, Matveev, B.A, Mzhelskii, I.V, Polovinkin, V.G, Remennyi, M.A, Rybalchenko, A. Yu, Stus, N.M
Published in Semiconductors (Woodbury, N.Y.) (01.02.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2012)
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Journal Article
Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes
Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.
Published in Technical physics (01.11.2014)
Published in Technical physics (01.11.2014)
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Journal Article
Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes
Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2014)
Published in Infrared physics & technology (01.05.2014)
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Journal Article
Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges
Usikova, A. A., Il’inskaya, N. D., Matveev, B. A., Shubina, T. V., Kop’ev, P. S.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2013)
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Journal Article
Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes
Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2011)
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