Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm Complementary Metal–Oxide–Semiconductor Technology and Beyond
Ohuchi, Kazuya, Kusunoki, Naoki, Matsuoka, Fumitomo
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm Complementary Metal--Oxide--Semiconductor Technology and Beyond
Ohuchi, Kazuya, Kusunoki, Naoki, Matsuoka, Fumitomo
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
The Impact of Technology Scaling for RF Complementary Metal–Oxide–Semiconductor
Morifuji, Eiji, Kimijima, Hideki, Kojima, Kenji, Iwai, Masaaki, Matsuoka, Fumitomo
Published in Japanese Journal of Applied Physics (01.01.2009)
Published in Japanese Journal of Applied Physics (01.01.2009)
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Journal Article
Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation
Komatsu, Kanako, Ozaki, Koichi, Takeuchi, Fumio, Shinohara, Daisuke, Kinoshita, Tomoko, Ishii, Yoshiaki, Sakamoto, Toshihiro, Matsuoka, Fumitomo
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
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Conference Proceeding
Investigation of the Breakdown Voltage Degradation under Hot-Carrier Injection in STI-based PchLDMOS Transistors
Kasai, Hirotaka, Shinohara, Daisuke, Shimizu, Mariko, Ishii, Yoshiaki, Komatsu, Kanako, Sakamoto, Toshihiro, Yonemura, Koji, Matsuoka, Fumitomo
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.09.2020)
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.09.2020)
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Conference Proceeding
Investigating the Highly Tolerant LDMOS Cell Array Design against the Negative Carrier Injection and the ESD Events
Komatsu, Kanako, Shinohara, Daisuke, Shimizu, Mariko, Ishii, Yoshiaki, Sakamoto, Toshihiro, Yonemura, Koji, Matsuoka, Fumitomo
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.09.2020)
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.09.2020)
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Conference Proceeding
Hot-carrier induced off-state leakage current increase of LDMOS and approach to overcome the phenomenon
Takahashi, Keita, Komatsu, Kanako, Sakamoto, Toshihiro, Kimura, Koji, Matsuoka, Fumitomo, Ishii, Yoshiaki, Egashira, Katsumi, Sakai, Masaki
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
HBM robustness optimization of fully isolated Nch-LDMOS for negative input voltage using unique index parameter
Takeuchi, Fumio, Nagano, Hirofumi, Sakamoto, Toshihiro, Kimura, Koji, Matsuoka, Fumitomo
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, PROGRAM, AND VEHICLE SYSTEM
MAEKAWA MOTOTAKA, SATO MISAKI, ASHIZAWA HIROKI, NAKAGAWA YASUNORI, HASEGAWA TARO, MATSUTANI SHINTARO, MATSUOKA FUMITOMO, NANAHARA MASATERU, INAMORI SHIGERU, SATO REI
Year of Publication 27.05.2021
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Year of Publication 27.05.2021
Patent
INFORMATION PROCESSOR, INFORMATION PROCESSING METHOD, AND PROGRAM
MAEKAWA MOTOTAKA, SATO MISAKI, ASHIZAWA HIROKI, NAKAGAWA YASUNORI, HASEGAWA TARO, MATSUTANI SHINTARO, MATSUOKA FUMITOMO, NANAHARA MASATERU, INAMORI SHIGERU, SATO REI
Year of Publication 27.05.2021
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Year of Publication 27.05.2021
Patent
INFORMATION PROCESSOR, INFORMATION PROCESSING METHOD AND PROGRAM
MAEKAWA MOTOTAKA, SATO MISAKI, ASHIZAWA HIROKI, NAKAGAWA YASUNORI, HASEGAWA TARO, MATSUTANI SHINTARO, MATSUOKA FUMITOMO, NANAHARA MASATERU, INAMORI SHIGERU, SATO REI
Year of Publication 20.05.2021
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Year of Publication 20.05.2021
Patent
Counter-Doped Surface Channel Metal-Oxide-Semiconductor Field-Effect Transistor with High Current Drivability and Steep Subthreshold Slope
Koike, Hidetoshi, Enda, Toshiyuki, Matsuoka, Fumitomo, Shigyo, Naoyuki
Published in Japanese Journal of Applied Physics (01.10.1998)
Published in Japanese Journal of Applied Physics (01.10.1998)
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Journal Article
Design Method and Mechanism Study of LDMOS to Conquer Stress Induced Degradation of Leakage Current and HTRB Reliability
Komatsu, Kanako, Kinoshita, Tomoko, Shioda, Saori, Sakamoto, Toshihiro, Kimura, Koji, Yonemura, Koji, Matsuoka, Fumitomo, Takahashi, Keita, Urata, Akihiro, Sakaguchi, Shoichi, Nagamatsu, Takahito
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Novel procedure to improve LDMOS ESD characteristics by optimizing drain structure
Komatsu, Kanako, Takahashi, Keita, Sakurai, Tadaomi, Ikimura, Takehito, Sakai, Masaki, Kimura, Koji, Matsuoka, Fumitomo
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Supply and threshold-Voltage trends for scaled logic and SRAM MOSFETs
Morifuji, E., Yoshida, T., Kanda, M., Matsuda, S., Yamada, S., Matsuoka, F.
Published in IEEE transactions on electron devices (01.06.2006)
Published in IEEE transactions on electron devices (01.06.2006)
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Journal Article
Layout Dependence Modeling for 45-nm CMOS With Stress-Enhanced Technique
Morifuji, E., Aikawa, H., Yoshimura, H., Sakata, A., Ohta, M., Iwai, M., Matsuoka, F.
Published in IEEE transactions on electron devices (01.09.2009)
Published in IEEE transactions on electron devices (01.09.2009)
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Journal Article