Room-temperature CW operation of a nitride-based vertical-cavity surface-emitting laser using thick GaInN quantum wells
Furuta, Takashi, Matsui, Kenjo, Horikawa, Kosuke, Ikeyama, Kazuki, Kozuka, Yugo, Yoshida, Shotaro, Akagi, Takanobu, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
A GaN‐Based VCSEL with a Convex Structure for Optical Guiding
Hayashi, Natsumi, Ogimoto, Junichiro, Matsui, Kenjo, Furuta, Takashi, Akagi, Takanobu, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Physica status solidi. A, Applications and materials science (23.05.2018)
Published in Physica status solidi. A, Applications and materials science (23.05.2018)
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Journal Article
Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors
Ikeyama, Kazuki, Kozuka, Yugo, Matsui, Kenjo, Yoshida, Shotaro, Akagi, Takanobu, Akatsuka, Yasuto, Koide, Norikatsu, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Applied physics express (01.10.2016)
Published in Applied physics express (01.10.2016)
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Journal Article
GaN-based vertical cavity surface emitting lasers with periodic gain structures
Matsui, Kenjo, Kozuka, Yugo, Ikeyama, Kazuki, Horikawa, Kosuke, Furuta, Takashi, Akagi, Takanobu, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
Matsui, Kenjo, Yamashita, Koji, Kaga, Mitsuru, Morita, Takatoshi, Suzuki, Tomoyuki, Takeuch, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
1.7-mW nitride-based vertical-cavity surface-emitting lasers using AlInN/GaN bottom DBRs
Furuta, Takashi, Matsui, Kenjo, Kozuka, Yugo, Yoshida, Shotaro, Hayasi, Natsumi, Akagi, Takanobu, Koide, Norikatsu, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in 2016 International Semiconductor Laser Conference (ISLC) (01.09.2016)
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Published in 2016 International Semiconductor Laser Conference (ISLC) (01.09.2016)
Conference Proceeding
Nitride semiconductor light-emitting device with periodic gain active layers
Iwaya Motoaki, Iwayama Sho, Akasaki Isamu, Takeuchi Tetsuya, Akagi Takanobu, Matsui Kenjo
Year of Publication 19.12.2017
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Year of Publication 19.12.2017
Patent
NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PERIODIC GAIN ACTIVE LAYERS
IWAYAMA SHO, IWAYA MOTOAKI, MATSUI KENJO, AKASAKI ISAMU, TAKEUCHI TETSUYA, AKAGI TAKANOBU
Year of Publication 09.06.2016
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Year of Publication 09.06.2016
Patent