Bi-Directional Operation and Active Err Reduction of 2nd Generation Back-Gate-Controlled IGBTs (BC-IGBTs)
Saraya, T., Fukui, M., Kobayashi, Y., Itou, K., Takakura, T., Suzuki, S., Gejo, R., Sakano, T., Inokuchi, T., Matsudai, T., Takao, K., Hiramoto, T.
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
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Conference Proceeding
Modeling and Simulation of Si IGBTs
Shigyo, N., Watanabe, M., Kakushima, K., Hoshii, T., Furukawa, K., Nakajima, A., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H., Iwai, H.
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
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Conference Proceeding
Switching of 3300V Scaled IGBT by 5V Gate Drive
Hiramoto, T., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Sarava, T., Iwai, H., Ogura, A., Nishizawa, S., Omura, I., Ohash, H., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y.
Published in 2019 IEEE 13th International Conference on ASIC (ASICON) (01.10.2019)
Published in 2019 IEEE 13th International Conference on ASIC (ASICON) (01.10.2019)
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Conference Proceeding
3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology
Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Satoh, K., Matsudai, T., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S., Omura, I., Ohashi, H., Hiramoto, T.
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
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Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices
Watanabe, M., Shigyo, N., Hoshii, T., Furukawa, K., Kakushima, K., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Muneta, I., Wakabayashi, H., Nakajima, A., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H., Iwai, H.
Published in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (08.04.2021)
Published in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (08.04.2021)
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Conference Proceeding
Optimization of 5V power devices based on CMOS for hot-carrier degradation
Nakamura, K., Naka, T., Matsushita, K., Matsudai, T., Yasuhara, N., Koichi Endo, Suzuki, F., Nakagawa, A.
Published in Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005 (2005)
Published in Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005 (2005)
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Conference Proceeding
Transport properties of the Cu/Ni multilayer system
Sato, H, Matsudai, T, Abdul-Razzaq, W, Fierz, C, Schroeder, P A
Published in Journal of physics. Condensed matter (01.08.1994)
Published in Journal of physics. Condensed matter (01.08.1994)
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Journal Article
A trench-gate injection enhanced lateral IEGT on SOI
Matsudai, T., Kitagawa, M., Nakagawa, A.
Published in Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 (1995)
Published in Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 (1995)
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Conference Proceeding
New anode design concept of 600 V thin wafer PT-IGBT with very low dose P-buffer and transparent P-emitter
MATSUDAI, T, TSUKUDA, M, UMEKAWA, S, TANAKA, M, NAKAGAWA, A
Published in IEE proceedings. Circuits, devices and systems (01.06.2004)
Published in IEE proceedings. Circuits, devices and systems (01.06.2004)
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Conference Proceeding
Journal Article
Thin SOI IGBT leakage current and a new device structure for high temperature operation
Matsudai, T., Yamaguchi, Y., Yasuhara, N., Nakagawa, A., Mochizuki, H.
Published in Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics (1994)
Published in Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics (1994)
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Conference Proceeding
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)
Tsutsui, K., Kakushima, K., Hoshii, T., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I., Ohashi, H., Iwai, H.
Published in 2017 IEEE 12th International Conference on ASIC (ASICON) (01.10.2017)
Published in 2017 IEEE 12th International Conference on ASIC (ASICON) (01.10.2017)
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Conference Proceeding
New anode design concept of 600V thin wafer PT-IGBT with very low dose p-buffer and transparent p-emitter
Matsudai, T., Tsukuda, M., Umekawa, S., Tanaka, M., Nakagawa, A.
Published in ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings (2003)
Published in ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings (2003)
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Conference Proceeding
Distribution of causes of maternal mortality during delivery and post-partum: results of an African multicentre hospital-based study
Thonneau, Patrick F, Matsudai, Tomohiro, Alihonou, Eusèbe, De souza, Jose, Faye, Ousseynou, Moreau, Jean-Charles, Djanhan, Yao, Welffens-Ekra, Christiane, Goyaux, Nathalie
Published in European journal of obstetrics & gynecology and reproductive biology (15.06.2004)
Published in European journal of obstetrics & gynecology and reproductive biology (15.06.2004)
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Journal Article
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S., Omura, I., Ohashi, H., Hiramoto, T.
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Conference Proceeding
ESD protection structure with novel trigger technique for LDMOS based on BiCD process
Nakamura, K., Naka, T., Matsushita, K., Matsudai, T., Yasuhara, N., Nakagawa, A.
Published in 2009 21st International Symposium on Power Semiconductor Devices & IC's (01.06.2009)
Published in 2009 21st International Symposium on Power Semiconductor Devices & IC's (01.06.2009)
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Conference Proceeding
Experimental verification of a 3D scaling principle for low Vce(sat) IGBT
Kakushima, K., Hoshii, T., Tsutsui, K., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I., Ohashi, H., Iwai, H.
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
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Conference Proceeding
A safe operating area model for SOI lateral IGBTs
Matsudai, T., Funaki, H., Nakagawa, A.
Published in Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's (1997)
Published in Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's (1997)
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