p-Type Bismuth Telluride-Based Composite Thermoelectric Materials Produced by Mechanical Alloying and Hot Extrusion
Keshavarz, M. K., Vasilevskiy, D., Masut, R.A., Turenne, S.
Published in Journal of electronic materials (01.07.2013)
Published in Journal of electronic materials (01.07.2013)
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Conference Proceeding
A method for the analysis of multiphase bonding structures in amorphous SiOxNy films
Cova, P., Poulin, S., Grenier, O., Masut, R. A.
Published in Journal of applied physics (01.04.2005)
Published in Journal of applied physics (01.04.2005)
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Journal Article
Nanocavities in He implanted InP
Chicoine, M., Roorda, S., Masut, R. A., Desjardins, P.
Published in Journal of applied physics (01.11.2003)
Published in Journal of applied physics (01.11.2003)
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Journal Article
III-V compliant substrates implemented by nanocavities introduced by ion implantation
Chicoine, M., Beaudoin, C., Roorda, S., Masut, R. A., Desjardins, P.
Published in Journal of applied physics (15.03.2005)
Published in Journal of applied physics (15.03.2005)
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Journal Article
Effect of unintentionally introduced oxygen on the electron–cyclotron resonance chemical-vapor deposition of SiNX films
Cova, P., Masut, R. A., Grenier, O., Poulin, S.
Published in Journal of applied physics (01.07.2002)
Published in Journal of applied physics (01.07.2002)
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Journal Article
Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure
Malikova, L., Pollak, Fred H., Masut, R. A., Desjardins, P., Mourokh, Lev G.
Published in Journal of applied physics (15.10.2003)
Published in Journal of applied physics (15.10.2003)
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Journal Article
Optical properties of submonolayer InAs/InP quantum dots on vicinal surfaces
Paki, P., Leonelli, R., Isnard, L., Masut, R. A.
Published in Journal of applied physics (15.12.1999)
Published in Journal of applied physics (15.12.1999)
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Journal Article
Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001)
Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., Masut, R. A.
Published in Journal of applied physics (15.03.2002)
Published in Journal of applied physics (15.03.2002)
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Journal Article
Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells
Aït-Ouali, A., Brebner, J. L., Yip, R. Y.-F., Masut, R. A.
Published in Journal of applied physics (15.12.1999)
Published in Journal of applied physics (15.12.1999)
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Journal Article
Localization of excitons by potential fluctuations and its effect on the Stokes shift in InGaP/InP quantum confined heterostructures
Aı̈t-Ouali, A., Chennouf, A., Yip, R. Y.-F., Brebner, J. L., Leonelli, R., Masut, R. A.
Published in Journal of applied physics (15.11.1998)
Published in Journal of applied physics (15.11.1998)
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Journal Article
Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine
Desjardins, P., Beaudoin, M., Leonelli, R., L’Espérance, G., Masut, R. A.
Published in Journal of applied physics (15.07.1996)
Published in Journal of applied physics (15.07.1996)
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