Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
Hite, J.K., Anderson, T.J., Luna, L.E., Gallagher, J.C., Mastro, M.A., Freitas, J.A., Eddy, C.R.
Published in Journal of crystal growth (15.09.2018)
Published in Journal of crystal growth (15.09.2018)
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Journal Article
GaN vertical and lateral polarity heterostructures on GaN substrates
Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.
Published in Journal of crystal growth (01.10.2011)
Published in Journal of crystal growth (01.10.2011)
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Journal Article
Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy
Freitas, J.A., Culbertson, J.C., Mastro, M.A., Kumagai, Y., Koukitu, A.
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Journal Article
Conference Proceeding
Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy
Freitas, J.A., Mastro, M.A., Glaser, E.R., Garces, N.Y., Lee, S.K., Chung, J.H., Oh, D.K., Shim, K.B.
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Journal Article
Conference Proceeding
An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
Thick homoepitaxial GaN with low carrier concentration for high blocking voltage
Freitas, J.A., Mastro, M.A., Imhoff, E.A., Tadjer, M.J., Eddy, C.R., Kub, F.J.
Published in Journal of crystal growth (01.09.2010)
Published in Journal of crystal growth (01.09.2010)
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Journal Article
MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates
Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.
Published in Journal of crystal growth (01.01.2006)
Published in Journal of crystal growth (01.01.2006)
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Journal Article
Conference Proceeding
Influence of polarity on GaN thermal stability
Mastro, M.A., Kryliouk, O.M., Anderson, T.J., Davydov, A., Shapiro, A.
Published in Journal of crystal growth (15.01.2005)
Published in Journal of crystal growth (15.01.2005)
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Journal Article
Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates
REED, M. D, KRYLIOUK, O. M, MASTRO, M. A, ANDERSON, T. J
Published in Journal of crystal growth (15.01.2005)
Published in Journal of crystal growth (15.01.2005)
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Journal Article
Oxynitride mediated epitaxy of gallium nitride on silicon(1 1 1) substrates in a merged hydride/metal-organic vapor phase epitaxy system
Mastro, M.A., Kryliouk, O.M., Anderson, T.J.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.02.2006)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.02.2006)
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Journal Article
Using Multiple Contrast Mechanisms via Forescatter Electron Channeling Contrast Imaging to Resolve the Burgers Vector of GaN Threading Dislocations
Picard, YN, Twigg, ME, Caldwell, JD, Jr, CR Eddy, Mastro, MA, Holm, RT
Published in Microscopy and microanalysis (01.07.2009)
Published in Microscopy and microanalysis (01.07.2009)
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Journal Article
Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors
Mastro, M.A., Tsvetkov, D., Soukhoveev, V., Usikov, A., Dmitriev, V., Luo, B., Ren, F., Baik, K.H., Pearton, S.J.
Published in Solid-state electronics (01.06.2003)
Published in Solid-state electronics (01.06.2003)
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Journal Article
RF performance of HVPE-grown AlGaN/GaN HEMTs
Mastro, M.A., Tsvetkov, D., Soukhoveev, V., Usikov, A., Dmitriev, V., Luo, B., Ren, F., Baik, K.H., Pearton, S.J.
Published in Solid-state electronics (2004)
Published in Solid-state electronics (2004)
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Journal Article
Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT
Mastro, M.A., Eddy, C.R., Bassim, N.D., Twigg, M.E., Edwards, A., Henry, R.L., Holm, R.H.
Published in Solid-state electronics (01.02.2005)
Published in Solid-state electronics (01.02.2005)
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Journal Article
Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers
Gillespie, J.K., Fitch, R.C., Moser, N., Jenkins, T., Sewell, J., Via, D., Crespo, A., Dabiran, A.M., Chow, P.P., Osinsky, A., Mastro, M.A., Tsvetkov, D., Soukhoveev, V., Usikov, A., Dmitriev, V., Luo, B., Pearton, S.J., Ren, F.
Published in Solid-state electronics (01.10.2003)
Published in Solid-state electronics (01.10.2003)
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Journal Article
Indium-free violet LEDs grown by HVPE
Usikov, A. S., Tsvetkov, D. V., Mastro, M. A., Pechnikov, A. I., Soukhoveev, V. A., Shapovalova, Y. V., Kovalenkov, O. V., Gainer, G. H., Karpov, S. Yu, Dmitriev, V. A., O'Meara, B., Gurevich, S. A., Arakcheeva, E. M., Zakhgeim, A. L., Helava, H.
Published in Physica status solidi. C (01.12.2003)
Published in Physica status solidi. C (01.12.2003)
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Journal Article
Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire-based templates
Usikov, A. S., Kim, Dae-Woo, Pechnikov, A. I., Ruban, Yu. V., Mastro, M. A., Melnik, Yu, Soukhoveev, V. A., Shapovalova, Y. V., Kovalenkov, O. V., Gainer, G. H., Mahajan, S., Dmitriev, V. A.
Published in Physica status solidi. C (01.12.2003)
Published in Physica status solidi. C (01.12.2003)
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Journal Article