Activation of Mg implanted in GaN by multicycle rapid thermal annealing
Anderson, T.J, Feigelson, B.N, Kub, F.J, Tadjer, M.J, Hobart, K.D, Mastro, M.A, Hite, J.K, Eddy, C.R
Published in Electronics letters (30.01.2014)
Published in Electronics letters (30.01.2014)
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Journal Article
An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
GaN vertical and lateral polarity heterostructures on GaN substrates
Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.
Published in Journal of crystal growth (01.10.2011)
Published in Journal of crystal growth (01.10.2011)
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Journal Article
Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy
Freitas, J.A., Culbertson, J.C., Mastro, M.A., Kumagai, Y., Koukitu, A.
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Journal Article
Conference Proceeding
Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays
Kim, B.J., Jung, H., Shin, J., Mastro, M.A., Eddy, C.R., Hite, J.K., Kim, S.H., Bang, J., Kim, J.
Published in Thin solid films (27.02.2009)
Published in Thin solid films (27.02.2009)
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Journal Article
Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in Journal of electronic materials (01.05.2010)
Published in Journal of electronic materials (01.05.2010)
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Journal Article
Productive and nutraceutical effects of globe artichoke fertilization
Negro, D, Montesano, V, De Lisi, A, Mastro, M.A, Rubino, P, Sonnante, G, Sarli, G
Published in Acta horticulturae (01.01.2013)
Published in Acta horticulturae (01.01.2013)
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Journal Article
Seeded growth of GaN single crystals from solution at near atmospheric pressure
Feigelson, B.N., Frazier, R.M., Gowda, M., Freitas, J.A., Fatemi, M., Mastro, M.A., Tischler, J.G.
Published in Journal of crystal growth (15.08.2008)
Published in Journal of crystal growth (15.08.2008)
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Journal Article
Conference Proceeding
MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates
Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.
Published in Journal of crystal growth (01.01.2006)
Published in Journal of crystal growth (01.01.2006)
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Journal Article
Conference Proceeding
Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates
REED, M. D, KRYLIOUK, O. M, MASTRO, M. A, ANDERSON, T. J
Published in Journal of crystal growth (15.01.2005)
Published in Journal of crystal growth (15.01.2005)
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Journal Article
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
Hite, J.K., Anderson, T.J., Luna, L.E., Gallagher, J.C., Mastro, M.A., Freitas, J.A., Eddy, C.R.
Published in Journal of crystal growth (15.09.2018)
Published in Journal of crystal growth (15.09.2018)
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Journal Article
Correlation of threading screw dislocation density to GaN 2‐DEG mobility
Hite, J.K., Gaddipati, P., Meyer, D.J., Mastro, M.A., Eddy, C.R.
Published in Electronics letters (06.11.2014)
Published in Electronics letters (06.11.2014)
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Journal Article
Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging
Picard, Y.N., Twigg, M.E., Caldwell, J.D., Eddy, C.R., Mastro, M.A., Holm, R.T.
Published in Scripta materialia (01.10.2009)
Published in Scripta materialia (01.10.2009)
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Journal Article
Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy
Freitas, J.A., Mastro, M.A., Glaser, E.R., Garces, N.Y., Lee, S.K., Chung, J.H., Oh, D.K., Shim, K.B.
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Journal Article
Conference Proceeding
Thick homoepitaxial GaN with low carrier concentration for high blocking voltage
Freitas, J.A., Mastro, M.A., Imhoff, E.A., Tadjer, M.J., Eddy, C.R., Kub, F.J.
Published in Journal of crystal growth (01.09.2010)
Published in Journal of crystal growth (01.09.2010)
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Journal Article
Influence of polarity on GaN thermal stability
Mastro, M.A., Kryliouk, O.M., Anderson, T.J., Davydov, A., Shapiro, A.
Published in Journal of crystal growth (15.01.2005)
Published in Journal of crystal growth (15.01.2005)
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Journal Article