Epitaxial growth of ultrahigh density Ge1−xSnx quantum dots on Si (111) substrates by codeposition of Ge and Sn on ultrathin SiO2 films
Nakamura, Yoshiaki, Masada, Akiko, Cho, Sung-Pyo, Tanaka, Nobuo, Ichikawa, Masakazu
Published in Journal of applied physics (15.12.2007)
Published in Journal of applied physics (15.12.2007)
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Journal Article
Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal--Oxide--Semiconductor Field-Effect Transistors
Masada, Akiko, Hirano, Izumi, Fukatsu, Shigeto, Mitani, Yuichiro
Published in Japanese Journal of Applied Physics (01.07.2010)
Published in Japanese Journal of Applied Physics (01.07.2010)
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Journal Article
Manipulating Ge quantum dots on ultrathin SixGe1-x oxide films using scanning tunneling microscope tips
NAKAMURA, Yoshiaki, TAKATA, Hiroyuki, MASADA, Akiko, ICHIKAWA, Masakazu
Published in Surface science (01.09.2006)
Published in Surface science (01.09.2006)
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Journal Article
Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics
Hirano, I., Nakasaki, Y., Fukatsu, S., Masada, A., Mitani, Y., Goto, M., Nagatomo, K., Inumiya, S., Sekine, K.
Published in 2009 IEEE International Reliability Physics Symposium (01.01.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.01.2009)
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Conference Proceeding
Epitaxial growth of ultrahigh density Ge 1 − x Sn x quantum dotson Si (111) substrates by codeposition of Ge and Sn on ultrathin SiO 2 films
Nakamura, Yoshiaki, Masada, Akiko, Cho, Sung-Pyo, Tanaka, Nobuo, Ichikawa, Masakazu
Published in Journal of applied physics (18.12.2007)
Published in Journal of applied physics (18.12.2007)
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Journal Article
Dual nature of metal gate electrode effects on BTI and dielectric breakdown in TaC/HfSiON MISFETs
Fukatsu, S., Hirano, I., Tatsumura, K., Masada, A., Fujii, S., Mitani, Y., Goto, M., Inumiya, S., Nakajima, K., Kawanaka, S., Aoyama, T.
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
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Conference Proceeding
SEMICONDUCTOR DEVICE
MITANI YUICHIRO, MASADA AKIKO, NAKASAKI YASUSHI, HIRANO IZUMI, SHIMIZU TATSUO, FUKATSU SHIGETO, KOIKE MASAHIRO
Year of Publication 30.09.2010
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Year of Publication 30.09.2010
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