Cr doped Ca2GeO4, Ca5Ge3O11 and Li2CaGeO4 single crystals grown by the flux method
Marychev, M.O., Koseva, I., Gencheva, G., Stoyanova, R., Kukeva, R., Nikolov, V.
Published in Journal of crystal growth (01.03.2017)
Published in Journal of crystal growth (01.03.2017)
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Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing
Nikolskaya, A.A., Korolev, D.S., Mikhaylov, A.N., Konakov, A.A., Belov, A.I., Marychev, M.O., Murtazin, R.I., Pavlov, D.A., Tetelbaum, D.I.
Published in Surface & coatings technology (25.03.2020)
Published in Surface & coatings technology (25.03.2020)
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Ca 2−x Li 2x GeO 4 solid solutions. Chemical composition range and flux crystal growth
Ivanov, V.A., Marychev, M.O., Andreev, P.V., Lykov, V.A., Faddeev, M.A., Koseva, I., Nikolov, V.
Published in Materials chemistry and physics (01.11.2015)
Published in Materials chemistry and physics (01.11.2015)
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Ca2GeO4:Cr4+ transparent nano-glass ceramics
Ivanov, V.A., Simanovskiy, D.V., Marychev, M.O., Andreev, P.V., Koseva, I., Tzvetkov, P., Nikolov, V.
Published in Journal of non-crystalline solids (15.01.2017)
Published in Journal of non-crystalline solids (15.01.2017)
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Novel solvents for the single crystal growth of germanate phases by the flux method
Ivanov, V.A., Marychev, M.O., Andreev, P.V., Koseva, I., Tzvetkov, P., Nikolov, V.
Published in Journal of crystal growth (15.09.2015)
Published in Journal of crystal growth (15.09.2015)
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Journal Article
Ca2−xLi2xGeO4 solid solutions. Chemical composition range and flux crystal growth
Ivanov, V.A., Marychev, M.O., Andreev, P.V., Lykov, V.A., Faddeev, M.A., Koseva, I., Nikolov, V.
Published in Materials chemistry and physics (01.11.2015)
Published in Materials chemistry and physics (01.11.2015)
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On the nature of electroluminescence at 1.5 µm in the breakdown mode of reverse-biased Er-doped silicon p-n-junction structures grown by sublimation molecular beam epitaxy
Kornaukhov, A.V, Ezhevskii, A.A, Marychev, M.O, Filatov, D.O, Shengurov, V.G
Published in Semiconductors (Woodbury, N.Y.) (01.01.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2011)
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Electroluminescence at a wavelength of 1.54 µm in Si:Er/Si structures consisting of a number of p-n junctions
Kuznetsov, V.P, Stepihova, M.V, Shmagin, V.B, Marychev, M.O, Ayabina, N.A, Kuznetsov, M.V, Andreev, B.A, Kornaukhov, A.V, Gorshkov, O.N, Krasilnik, Z.F
Published in Semiconductors (Woodbury, N.Y.) (01.11.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2011)
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Journal Article
Electroluminescence at a wavelength of 1.5 µm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors
Kuznetsov, V.P, Shmagin, V.B, Marychev, M.O, Kudryavtsev, K.E, Kuznetsov, M.V, Andreev, B.A, Kornaukhov, A.V, Gorshkov, O.N, Krasilnik, Z.F
Published in Semiconductors (Woodbury, N.Y.) (01.12.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2010)
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Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
Kuznetsov, V. P., Shmagin, V. B., Drozdov, M. N., Marychev, M. O., Kudryavtsev, K. E., Kuznetsov, M. V., Andreev, B. A., Kornaukhov, A. V., Krasilnik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2011)
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