Improvement of process parameters for polycrystalline silicon carbide low pressure chemical vapor deposition on 150 mm silicon substrate using monomethylsilane as precursor
AJAYAKUMAR, A, MARUTHOOR, S, FUCHS, T, ROHLFING, F, JAKOVLEV, O, WILDE, J, REINECKE, H
Published in Thin solid films (01.06.2013)
Published in Thin solid films (01.06.2013)
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Journal Article
Improvement of process parameters for polycrystalline silicon carbide low pressure chemical vapor deposition on 150mm silicon substrate using monomethylsilane as precursor
Ajayakumar, A., Maruthoor, S., Fuchs, T., Rohlfing, F., Jakovlev, O., Wilde, J., Reinecke, H.
Published in Thin solid films (01.06.2013)
Published in Thin solid films (01.06.2013)
Get full text
Journal Article