Epitaxial diamond growth on sapphire in an oxidizing environment
Tachibana, Takeshi, Yoshida, Kenji, Yoshimoto, Mamoru, Maruta, Hideaki, Koinuma, Hideomi, Kakihana, Masato, Hishitani, Yoshiko, Nishio, Shigeru
Published in Nature (London) (27.05.1999)
Published in Nature (London) (27.05.1999)
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Journal Article
Effect of Al pre-deposition layer on the epitaxial growth of silicon on Al 2 O 3 /Si (111) substrates
Ishida, Makoto, Jung, Young-Chul, Miura, Hiroyuki, Koji, Yoshiaki, Sawada, Kazuaki, Yoshimoto, Mamoru, Keisuke, Mizuno, Takahumi, Miyahara, Hideaki, Maruta
Published in Thin solid films (01.07.2000)
Published in Thin solid films (01.07.2000)
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Journal Article
Epitaxial Growth of InAs on Single-Crystalline Mn–Zn Ferrite Substrates
Ikeda, Takeshi, Fujioka, Hiroshi, Hayakawa, Shinjiro, Ono, Kanta, Oshima, Masaharu, Yoshimoto, Mamoru, Maruta, Hideaki, Koinuma, Hideomi, Inaba, Katsuhiko, Matsuo, Ryuji
Published in Japanese Journal of Applied Physics (01.08.1999)
Published in Japanese Journal of Applied Physics (01.08.1999)
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Journal Article
Effect of Al pre-deposition layer on the epitaxial growth of silicon on Al sub(2)O sub(3)/Si (111) substrates
Ishida, Makoto, Jung, Young-Chul, Miura, Hiroyuki, Koji, Yoshiaki, Sawada, Kazuaki, Yoshimoto, Mamoru, Keisuke, Mizuno, Takahumi, Miyahara, Hideaki, Maruta
Published in Thin solid films (01.07.2000)
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Published in Thin solid films (01.07.2000)
Journal Article
Epitaxial growth of MnAs on single-crystalline Mn–Zn ferrite substrates
Ikeda, Takeshi, Fujioka, Hiroshi, Hayakawa, Shinjiro, Ono, Kanta, Oshima, Masaharu, Yoshimoto, Mamoru, Maruta, Hideaki, Koinuma, Hideomi, Inaba, Katsuhiko, Matsuo, Ryuji
Published in Journal of crystal growth (2000)
Published in Journal of crystal growth (2000)
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Journal Article
Effect of Al pre-deposition layer on the epitaxial growth of silicon on Al2O3/Si (111) substrates
ISHIDA, M, JUNG, Y.-C, MIURA, H, KOJI, Y, SAWADA, K, YOSHIMOTO, M, KEISUKE, M, TAKAHUMI, M, HIDEAKI, M
Published in Thin solid films (03.07.2000)
Published in Thin solid films (03.07.2000)
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