Effect of the magnetic field on the nonlinear optical rectification and second and third harmonic generation in double d-doped GaAs quantum wells
Martínez-Orozco, JC, Rojas-Briseno, JG, Rodríguez-Magdaleno, KA, Rodríguez-Vargas, I, Mora-Ramos, ME, Restrepo, RL, Ungan, F, Kasapoglu, E, Duque, CA
Published in Physica. B, Condensed matter (15.11.2017)
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Published in Physica. B, Condensed matter (15.11.2017)
Journal Article
A simple model for the differential capacitance profile in the atomic layer doped field effect transistor (ALD-FET) in GaAs
Martı́nez-Orozco, J.C, Gaggero-Sager, L.M, Vlaev, Stoyan J
Published in Materials science & engineering. B, Solid-state materials for advanced technology (20.07.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (20.07.2001)
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Journal Article
Conference Proceeding
Differential Capacitance for the AlN/GaN Heterostructure Field Effect Transistors
Martínez-Orozco, J.C., Gaggero-Sager, L.M., Mora-Ramos, M.E., Pérez-Quintana, I.
Published in Physica status solidi. B. Basic research (01.04.2002)
Published in Physica status solidi. B. Basic research (01.04.2002)
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Journal Article
Conference Proceeding