Enhanced Photovoltaic Properties Induced by Ferroelectric Domain Structures in Organometallic Halide Perovskites
Bi, Fuzhen, Markov, Stanislav, Wang, Rulin, Kwok, YanHo, Zhou, Weijun, Liu, Limin, Zheng, Xiao, Chen, GuanHua, Yam, ChiYung
Published in Journal of physical chemistry. C (01.06.2017)
Published in Journal of physical chemistry. C (01.06.2017)
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Journal Article
Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs
Adamu-Lema, F., Monzio Compagnoni, Christian, Amoroso, S. M., Castellani, N., Gerrer, L., Markov, S., Spinelli, A. S., Lacaita, A. L., Asenov, A.
Published in IEEE transactions on electron devices (01.02.2013)
Published in IEEE transactions on electron devices (01.02.2013)
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Journal Article
Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG
Markov, S., Zain, A. S. M., Cheng, B., Asenov, A.
Published in 2012 IEEE International SOI Conference (SOI) (01.10.2012)
Published in 2012 IEEE International SOI Conference (SOI) (01.10.2012)
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Conference Proceeding
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D 'atomistic' simulation
Amoroso, S. M., Gerrer, L., Markov, S., Adamu-Lema, F., Asenov, A.
Published in 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2012)
Published in 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2012)
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Conference Proceeding
Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI
Markov, S., Idris, N. M., Asenov, A.
Published in IEEE 2011 International SOI Conference (01.10.2011)
Published in IEEE 2011 International SOI Conference (01.10.2011)
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Conference Proceeding
Si-SiO2 interface band-gap transition - effects on MOS inversion layer
Markov, Stanislav, Sushko, Peter V., Roy, Scott, Fiegna, Claudio, Sangiorgi, Enrico, Shluger, Alexander L., Asenov, Asen
Published in Physica status solidi. A, Applications and materials science (01.06.2008)
Published in Physica status solidi. A, Applications and materials science (01.06.2008)
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Journal Article
Conference Proceeding
Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants
Markov, Stanislav, Brown, Andrew R., Cheng, Binjie, Roy, Gareth, Roy, Scott, Asenov, Asen
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
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Journal Article
Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling
Markov, Stanislav, Kwok, Yanho, Li, Jun, Zhou, Weijun, Zhou, Yi, Chen, Guanhua
Published in IEEE transactions on electron devices (01.03.2019)
Published in IEEE transactions on electron devices (01.03.2019)
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Journal Article
Towards Polyoxometalate-Cluster-Based Nano-Electronics
Vilà-Nadal, Laia, Mitchell, Scott G., Markov, Stanislav, Busche, Christoph, Georgiev, Vihar, Asenov, Asen, Cronin, Leroy
Published in Chemistry : a European journal (02.12.2013)
Published in Chemistry : a European journal (02.12.2013)
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Journal Article
Permittivity of Oxidized Ultra-Thin Silicon Films From Atomistic Simulations
Markov, Stanislav, Penazzi, Gabriele, Kwok, YanHo, Pecchia, Alessandro, Aradi, Balint, Frauenheim, Thomas, GuanHua Chen
Published in IEEE electron device letters (01.10.2015)
Published in IEEE electron device letters (01.10.2015)
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Journal Article
Atomic Level Modeling of Extremely Thin Silicon-on-Insulator MOSFETs Including the Silicon Dioxide: Electronic Structure
Markov, Stanislav, Aradi, Balint, Chi-Yung Yam, Hang Xie, Frauenheim, Thomas, Guanhua Chen
Published in IEEE transactions on electron devices (01.03.2015)
Published in IEEE transactions on electron devices (01.03.2015)
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Journal Article
Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal-Oxide Storage
Georgiev, Vihar P., Markov, Stanislav, Vila-Nadal, Laia, Busche, Christoph, Cronin, Leroy, Asenov, Asen
Published in IEEE transactions on electron devices (01.06.2014)
Published in IEEE transactions on electron devices (01.06.2014)
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Journal Article
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
Amoroso, Salvatore Maria, Gerrer, Louis, Markov, Stanislav, Adamu-Lema, Fikru, Asenov, Asen
Published in Solid-state electronics (01.06.2013)
Published in Solid-state electronics (01.06.2013)
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Journal Article
Conference Proceeding