Electrical properties of nitrogen-related defects in n-type GaAsN grown by molecular-beam epitaxy
Shafi, M., Mari, R.H., Henini, M., Taylor, D., Hopkinson, M.
Published in Physica status solidi. C (01.12.2009)
Published in Physica status solidi. C (01.12.2009)
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Journal Article
Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes
Khatab, A., Shafi, M., Mari, R. H., Aziz, M., Henini, M., Patriarche, G., Troadec, D., Sadeghi, M., Wang, S.
Published in Physica status solidi. C (01.07.2012)
Published in Physica status solidi. C (01.07.2012)
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Photomodulated transmittance of GaBiAs layers grown on (001) and (311)B GaAs substrates
Kudrawiec, R., Poloczek, P., Misiewicz, J., Shafi, M., Ibáñez, J., Mari, R.H., Henini, M., Schmidbauer, M., Novikov, S.V., Turyanska, L., Molina, S.I., Sales, D.L., Chisholm, M.F.
Published in Microelectronics (01.03.2009)
Published in Microelectronics (01.03.2009)
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Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (211) and (311) oriented GaAs substrates
Boumaraf, R., Sengouga, N., Mari, R.H., Meftah, Af, Aziz, M., Jameel, Dler, Al Saqri, Noor, Taylor, D., Henini, M.
Published in Superlattices and microstructures (01.01.2014)
Published in Superlattices and microstructures (01.01.2014)
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