In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices
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Conference Proceeding
Electromodulation spectroscopy study of a GaAs/GaAlAs asymmetric triangular quamtum well structure
Qiang, H., Huang, Y-S., Pollak, Fred H., Chi, W.S., Mathine, D.L., Maracas, G.N.
Published in Solid-state electronics (01.04.1994)
Published in Solid-state electronics (01.04.1994)
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Electrical and optical characterization of gas source and solid source MBE low temperature buffers
Puechner, R.A., Johnson, D.A., Shiralagi, K.T., Gerber, D.S., Droopad, R., Maracas, G.N.
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
Low temperature GaAs grown by gas source molecular beam epitaxy
Droopad, R., Shiralagi, K.T., Puechner, R.A., Choi, K.Y., Maracas, G.N.
Published in Journal of crystal growth (01.05.1992)
Published in Journal of crystal growth (01.05.1992)
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Conference Proceeding
A vertical-cavity surface-emitting laser appliqued to a 0.8-μm NMOS driver
Mathine, D.L., Droopad, R., Maracas, G.N.
Published in IEEE photonics technology letters (01.07.1997)
Published in IEEE photonics technology letters (01.07.1997)
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Frequency-dependent electrical characteristics of GaAs MESFETs
Golio, J.M., Miller, M.G., Maracas, G.N., Johnson, D.A.
Published in IEEE transactions on electron devices (01.05.1990)
Published in IEEE transactions on electron devices (01.05.1990)
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Real time in-situ thickness control of Fabry—Perot cavities in MBE by 44 and 88 wavelength ellipsometry
Kuo, C.H., Boonzaayer, M.D., DeHerrera, M.F., Schroder, D.K., Maracas, G.N., Johs, B.
Published in Journal of crystal growth (01.05.1997)
Published in Journal of crystal growth (01.05.1997)
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A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratio
Gerber, D.S., Droopad, R., Maracas, G.N.
Published in IEEE photonics technology letters (01.01.1993)
Published in IEEE photonics technology letters (01.01.1993)
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Journal Article
Selectively oxidized GaAs MESFETs transferred to a Si substrate
Wheeler, C.B., Mathine, D.L., Johnson, S.R., Maracas, G.N., Allee, D.R.
Published in IEEE electron device letters (01.04.1997)
Published in IEEE electron device letters (01.04.1997)
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Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer
Wheeler, C., Daryanani, S., Mathine, D.L., Maracas, G.N., Allee, D.R.
Published in IEEE photonics technology letters (01.02.1997)
Published in IEEE photonics technology letters (01.02.1997)
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Journal Article
A novel optical bistable multiple-quantum-well phase modulator
Park, C., Shiralagi, K.T., Droopad, R., Maracas, G.N.
Published in IEEE photonics technology letters (01.11.1992)
Published in IEEE photonics technology letters (01.11.1992)
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Journal Article
In-situ and ex-situ characterization of GaAs/AlAs quantum well structures using spectroscopic ellipsometry
Edwards, J.L., Maracas, G.N., Shiralagi, K.T., Choi, K.Y., Droopad, R.
Published in Journal of crystal growth (02.05.1992)
Published in Journal of crystal growth (02.05.1992)
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Conference Proceeding
The effect of impurity profile and oxygen on the peak-to-valley ratio of heterostructure interband tunneling diodes (HITD)
El-Zein, N., Maracas, G.N., Harris, G., Kramer, G., Goronkin, H.
Published in Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials (1997)
Published in Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials (1997)
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Conference Proceeding
Low-frequency oscillations and routes to chaos in semi-insulating GaAs
Maracas, G.N., Porod, W., Johnson, D.A., Ferry, D.K., Goronkin, H.
Published in Physica B + C (01.01.1985)
Published in Physica B + C (01.01.1985)
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Enhancement of mobility in pseudomorphic FETs with up and down monolayers
Goronkin, H., Tehrani, S., Droopad, R., Maracas, G.N., Shen, J., Legge, R.N., Zhu, X.T.
Published in IEEE transactions on electron devices (01.12.1991)
Published in IEEE transactions on electron devices (01.12.1991)
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