A new method to characterize border traps in submicron transistors using hysteresis in the drain current
ManjulaRani, K.N., Rao, V.R., Vasi, J.
Published in IEEE transactions on electron devices (01.04.2003)
Published in IEEE transactions on electron devices (01.04.2003)
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Journal Article
Stress voltage dependence HCI induced traps distribution in 60V LDNMOS
Samanta, S.K., Patel, N., ManjulaRani, K.N., Jang, K.
Published in 2009 IEEE International Integrated Reliability Workshop Final Report (01.10.2009)
Published in 2009 IEEE International Integrated Reliability Workshop Final Report (01.10.2009)
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Conference Proceeding
Hot-carrier reliability study and simulation methodology development for 65nm technology
ManjulaRani, K.N., Mooraka, R.M., Patel, N., Samanta, S., Narasimhan, G., Lakshminarayanan, N., Kapre, R., Puchner, H.
Published in 2009 IEEE International Integrated Reliability Workshop Final Report (01.10.2009)
Published in 2009 IEEE International Integrated Reliability Workshop Final Report (01.10.2009)
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Conference Proceeding
Reliability of ultrathin JVD silicon nitride MNSFETs under high field stressing
ManjulaRani, K.N., Ramgopal Rao, V., Vasi, J.
Published in Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003 (2003)
Published in Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003 (2003)
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Conference Proceeding
A simulation methodology for the operational life time study of deep sub-micron technology integrated circuits using channel length dependent NBTI model
Mooraka, R., ManjulaRani, K.N., Dung Ho, Mathur, N., Puchner, H.
Published in 2007 International Workshop on Physics of Semiconductor Devices (01.12.2007)
Published in 2007 International Workshop on Physics of Semiconductor Devices (01.12.2007)
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Conference Proceeding
Stress Voltage Polarity Dependence of JVD- $hboxSi_3 hboxN_4$ MNSFET Degradation
ManjulaRani, K.N., Rao, V.R., Vasi, J.
Published in IEEE transactions on device and materials reliability (01.03.2004)
Published in IEEE transactions on device and materials reliability (01.03.2004)
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Magazine Article
Stress voltage polarity dependence of JVD-Si/sub 3/N/sub 4/ MNSFET degradation
ManjulaRani, K.N., Rao, V.R., Vasi, J.
Published in IEEE transactions on device and materials reliability (01.03.2004)
Published in IEEE transactions on device and materials reliability (01.03.2004)
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Magazine Article
Stress voltage polarity dependence of JVD-Si3N4 MNSFET degradation
ManjulaRani, K.N, Rao, V.R, Vasi, J
Published in IEEE transactions on device and materials reliability (01.03.2004)
Published in IEEE transactions on device and materials reliability (01.03.2004)
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Magazine Article