Sub-nanosecond threshold switching dynamics in GeSb2Te4 phase change memory device
Saxena, Nishant, Manivannan, Anbarasu
Published in Journal of physics. D, Applied physics (25.10.2019)
Published in Journal of physics. D, Applied physics (25.10.2019)
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Journal Article
A scheme for enabling the ultimate speed of threshold switching in phase change memory devices
Saxena, Nishant, Raghunathan, Rajamani, Manivannan, Anbarasu
Published in Scientific reports (17.03.2021)
Published in Scientific reports (17.03.2021)
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Journal Article
Shape memory effect, temperature distribution and mechanical properties of friction stir welded nitinol
Prabu, S.S. Mani, Madhu, H.C., Perugu, Chandra S., Akash, K., Mithun, R., Kumar, P. Ajay, Kailas, Satish V., Anbarasu, Manivannan, Palani, I.A.
Published in Journal of alloys and compounds (05.03.2019)
Published in Journal of alloys and compounds (05.03.2019)
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Journal Article
Laser assisted wet texturing of flexible polyethylene terephthalate substrate using Nd 3+ :YAG laser for photovoltaics devices
Shukla, Ashish K., Akash, K, Palani, I.A., Manivannan, Anbarasu
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.12.2017)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.12.2017)
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Journal Article
Threshold switching dynamics of pseudo-binary GeTe-Sb2Te3 phase change memory devices
Saxena, Nishant, Manivannan, Anbarasu
Published in Journal of physics. D, Applied physics (12.07.2019)
Published in Journal of physics. D, Applied physics (12.07.2019)
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Journal Article
Sub-nanosecond threshold switching dynamics in GeSb 2 Te 4 phase change memory device
Saxena, Nishant, Manivannan, Anbarasu
Published in Journal of physics. D, Applied physics (09.01.2020)
Published in Journal of physics. D, Applied physics (09.01.2020)
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Journal Article
Threshold switching dynamics of pseudo-binary GeTe–Sb 2 Te 3 phase change memory devices
Saxena, Nishant, Manivannan, Anbarasu
Published in Journal of physics. D, Applied physics (11.09.2019)
Published in Journal of physics. D, Applied physics (11.09.2019)
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Journal Article
Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices
Saxena, Nishant, Persch, Christoph, Wuttig, Matthias, Manivannan, Anbarasu
Published in Scientific reports (17.12.2019)
Published in Scientific reports (17.12.2019)
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Journal Article
An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects
Durai, Suresh, Raj, Srinivasan, Manivannan, Anbarasu
Published in Semiconductor science and technology (01.01.2020)
Published in Semiconductor science and technology (01.01.2020)
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Journal Article
Temperature dependent structural evolution and crystallization properties of thin Ge15Te85 film revealed by in situ resistance, x-ray diffraction and scanning electron microscopic studies
Sengottaiyan, Rathinavelu, Saxena, Nishant, Shukla, Krishna Dayal, Manivannan, Anbarasu
Published in Journal of physics. D, Applied physics (09.01.2020)
Published in Journal of physics. D, Applied physics (09.01.2020)
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Journal Article