Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications
Joseph, A J, Gillis, J D, Doherty, M, Lindgren, P J, Previti-Kelly, R A, Malladi, R M, Wang, P-C, Erturk, M, Ding, H, Gebreselasie, E G, McPartlin, M J, Dunn, J
Published in IBM journal of research and development (01.11.2008)
Published in IBM journal of research and development (01.11.2008)
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Journal Article
A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs
Qingqing Liang, Cressler, J.D., Guofu Niu, Yuan Lu, Freeman, G., Ahlgren, D.C., Malladi, R.M., Newton, K., Harame, D.L.
Published in IEEE transactions on microwave theory and techniques (01.11.2003)
Published in IEEE transactions on microwave theory and techniques (01.11.2003)
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Journal Article
Cellular morphology and distribution on a stretching blood-material interface
McMillin, C R, Malladi, M R, Ott, D W, Evancho, M M, Schmidt, S P
Published in Journal of biomedical materials research (01.04.1988)
Published in Journal of biomedical materials research (01.04.1988)
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Journal Article
Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications: 3D chip technology
JOSEPH, A. J, GILLIS, J. D, MCPARTLIN, M. J, DUNN, J, DOHERTY, M, LINDGREN, P. J, PREVITI-KELLY, R. A, MALLADI, R. M, WANG, P.-C, ERTURK, M, DING, H, GEBRESELASIE, E. G
Published in IBM journal of research and development (2008)
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Published in IBM journal of research and development (2008)
Journal Article
A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs
Qingqing Liang, Cressler, J.D., Guofu Niu, Malladi, R.M., Newton, K., Harame, D.L.
Published in IEEE transactions on electron devices (01.10.2002)
Published in IEEE transactions on electron devices (01.10.2002)
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Journal Article
Influence of the Ge profile on VBE and current gain mismatch in Advanced SiGe BICMOS NPN HBT with 200 GHz fT
Dahlstrom, M., Walter, K., Von Bruns, S., Malladi, R.M., Newton, Kim M., Joseph, A.J.
Published in 2006 Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2006)
Published in 2006 Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2006)
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