Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction
Piotrowicz, C., Mohamad, B., Malbert, N., Bécu, S., Ruel, S., Le Royer, C.
Published in Journal of applied physics (07.05.2024)
Published in Journal of applied physics (07.05.2024)
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Journal Article
Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications
Said, N., Harrouche, K., Medjdoub, F., Labat, N., Tartarin, J.G., Malbert, N.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations
Piotrowic, C., Mohamad, B., Rocha, P. Fernandes Paes Pinto, Malbert, N., Ruel, S., Pimenta-Barros, P., Jaud, M.-A., Vauche, L., Royer, C. Le
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
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Conference Proceeding
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations
Faqir, M., Bouya, M., Malbert, N., Labat, N., Carisetti, D., Lambert, B., Verzellesi, G., Fantini, F.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Conference Proceeding
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress
Brunel, L., Lambert, B., Mezenge, P., Bataille, J., Floriot, D., Grünenpütt, J., Blanck, H., Carisetti, D., Gourdel, Y., Malbert, N., Curutchet, A., Labat, N.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Conference Proceeding
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
Karboyan, S., Tartarin, J.G., Rzin, M., Brunel, L., Curutchet, A., Malbert, N., Labat, N., Carisetti, D., Lambert, B., Mermoux, M., Romain-Latu, E., Thomas, F., Bouexière, C., Moreau, C.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test
Lambert, B., Labat, N., Carisetti, D., Karboyan, S., Tartarin, J.G., Thorpe, J., Brunel, L., Curutchet, A., Malbert, N., Latu-Romain, E., Mermoux, M.
Published in Microelectronics and reliability (01.09.2012)
Published in Microelectronics and reliability (01.09.2012)
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Journal Article
Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques
Ben Naceur, W., Malbert, N., Labat, N., Frémont, H., Carisetti, D., Clément, J.-C., Muraro, J.-L., Bonnet, B.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Journal Article
Conference Proceeding
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques
Bouya, M., Malbert, N., Labat, N., Carisetti, D., Perdu, P., Clément, J.C., Lambert, B., Bonnet, M.
Published in Microelectronics and reliability (01.08.2008)
Published in Microelectronics and reliability (01.08.2008)
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Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC
Bouya, M., Carisetti, D., Malbert, N., Labat, N., Perdu, P., Clément, J.C., Bonnet, M., Pataut, G.
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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Journal Article
Conference Proceeding
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements
Sozza, A., Curutchet, A., Dua, C., Malbert, N., Labat, N., Touboul, A.
Published in Microelectronics and reliability (01.09.2006)
Published in Microelectronics and reliability (01.09.2006)
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Journal Article
Conference Proceeding
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions
Ismail, N., Malbert, N., Labat, N., Touboul, A., Muraro, J.L., Brasseau, F., Langrez, D.
Published in Microelectronics and reliability (01.09.2005)
Published in Microelectronics and reliability (01.09.2005)
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Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors
LABAT, N, MALBERT, N, MANEUX, C, TOUBOUL, A
Published in Microelectronics and reliability (01.09.2004)
Published in Microelectronics and reliability (01.09.2004)
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Conference Proceeding
Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates
Curutchet, A., Malbert, N., Labat, N., Touboul, A, Gaquière, C., Minko, A., Uren, M.
Published in Microelectronics and reliability (01.09.2003)
Published in Microelectronics and reliability (01.09.2003)
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Journal Article
A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures
Piotrowicz, C., Mohamad, B., Rrustemi, B., Malbert, N., Jaud, M.A., Vandendaele, W., Charles, M., Gwoziecki, R.
Published in Solid-state electronics (01.08.2022)
Published in Solid-state electronics (01.08.2022)
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Journal Article
Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs
Malbert, N, Labat, N, Curutchet, A, Sury, C, Hoel, V, de Jaeger, J.-C, Defrance, N, Douvry, Y, Dua, C, Oualli, M, Piazza, M, Bru-Chevallier, C, Bluet, J.-M, Chikhaoui, W
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
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Conference Proceeding
Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests
Magnier, F., Lambert, B., Chang, C., Curutchet, A., Labat, N., Malbert, N.
Published in Microelectronics and reliability (01.09.2019)
Published in Microelectronics and reliability (01.09.2019)
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Journal Article
Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG)
Piotrowicz, C., Mohamad, B., Malbert, N., Jaud, M.-A., Vandendaele, W., Charles, M., Gwoziecki, R.
Published in Solid-state electronics (01.03.2023)
Published in Solid-state electronics (01.03.2023)
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Journal Article
A 10 GHz dielectric resonator oscillator using GaN technology
Rice, P., Moore, M., Barnes, A.R., Uren, M.J., Malbert, N., Labat, N., Sloan, R.
Published in 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) (2004)
Published in 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) (2004)
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