Structural, electronic and optical properties of transition metal doped Hf1-xTMxO2 (TM = Co, Ni and Zn) using modified TB-mBJ potential for optoelectronic memristors devices
Khera, Ejaz Ahmad, Ullah, Hafeez, Imran, Muhammad, Niaz, N.A., Hussain, Fayyaz, Arif Khalil, R.M., Rasheed, Umbreen, Atif Sattar, M., Iqbal, Fasial, Mahta, Chandreswar, Rana, Anwar Manzoor, Kim, Sungjun
Published in Optik (Stuttgart) (01.06.2020)
Published in Optik (Stuttgart) (01.06.2020)
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