ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
Aubry, R., Jacquet, J. C., Oualli, M., Patard, O., Piotrowicz, S., Chartier, E., Michel, N., Trinh Xuan, L., Lancereau, D., Potier, C., Magis, M., Gamarra, P., Lacam, C., Tordjman, M., Jardel, O., Dua, C., Delage, S. L.
Published in IEEE electron device letters (01.05.2016)
Published in IEEE electron device letters (01.05.2016)
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Journal Article
AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz
Sarazin, N., Morvan, E., di Forte Poisson, M.A., Oualli, M., Gaquiere, C., Jardel, O., Drisse, O., Tordjman, M., Magis, M., Delage, S.L.
Published in IEEE electron device letters (01.01.2010)
Published in IEEE electron device letters (01.01.2010)
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Journal Article
Characteristics of Al2O3/AlInN/GaN MOSHEMT
MEDJDOUB, F, SARAZIN, N, TORDJMAN, M, MAGIS, M, DI FORTE-POISSON, M. A, KNEZ, M, DELOS, E, GAQUIERE, C, DELAGE, S. L, KOHN, E
Published in Electronics letters (2007)
Published in Electronics letters (2007)
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Journal Article
LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications
di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Iliopoulos, E., Georgakilas, A., Kominou, P., Guziewicz, M., Kaminska, E., Piotrowska, A., Gaquière, C., Oualli, M., Chartier, E., Morvan, E., Delage, S.
Published in Physica status solidi. C (01.05.2010)
Published in Physica status solidi. C (01.05.2010)
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Journal Article
X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate
Sarazin, N., Jardel, O., Morvan, E., Aubry, R., Laurent, M., Magis, M., Tordjman, M., Alloui, M., Drisse, O., Di Persio, J., di Forte Poisson, M.A., Delage, S.L., Vellas, N., Gaquière, C., Théron, D.
Published in Electronics letters (2007)
Published in Electronics letters (2007)
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Journal Article
In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD
di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Morvan, E., Aubry, R., di Persio, J., Grimbert, B.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application
di Forte Poisson, M.-A., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Toth, L., Pecz, B., Guziewicz, M., Thorpe, J., Aubry, R., Morvan, E., Sarazin, N., Gaquière, C., Meneghesso, G., Hoel, V., Jacquet, J.-C., Delage, S.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
Conference Proceeding
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices
di Forte Poisson, M.-A., Magis, M., Tordjman, M., Aubry, R., Sarazin, N., Peschang, M., Morvan, E., Delage, S.L., di Persio, J., Quéré, R., Grimbert, B., Hoel, V., Delos, E., Ducatteau, D., Gaquiere, C.
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
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Journal Article
Conference Proceeding
Structural characterisation of GaAlN/GaN HEMT heterostructures
Sarazin, N., Durand, O., Magis, M., di Forte Poisson, M.-A., Di Persio, J.
Published in Applied surface science (31.10.2006)
Published in Applied surface science (31.10.2006)
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Journal Article
Conference Proceeding
III-Nitrides semiconductor compounds for microwave devices
di Forte-Poisson, M. A., Magis, M., Sarazin, N., Tordjman, M., di Persio, J.
Published in Physica status solidi. A, Applications and materials science (01.01.2006)
Published in Physica status solidi. A, Applications and materials science (01.01.2006)
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Journal Article
LPMOCVD growth of GaN on silicon carbide
di Forte-Poisson, M.-A., Romann, A., Tordjman, M., Magis, M., Di Persio, J., Jacques, Ch, Vicente, P.
Published in Journal of crystal growth (01.02.2003)
Published in Journal of crystal growth (01.02.2003)
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Journal Article
Conference Proceeding
MOCVD growth of group III nitrides for high power, high frequency applications
di Forte Poisson, M.-A., Magis, M., Tordjman, M., Sarazin, N., Persio, J. di
Published in Physica status solidi. C (01.01.2005)
Published in Physica status solidi. C (01.01.2005)
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Journal Article
Characteristics of Al2O3/AllnN/GaN MOSHEMT
Medjdoub, F, Sarazin, N., Tordjman, M., Magis, M., Di Forte-Poisson, M.A., Knez, M., Delos, E., Gaquière, Christophe, Delage, S.L., Kohn, E.
Published in Electronics letters (07.06.2007)
Published in Electronics letters (07.06.2007)
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Journal Article
Characteristics of Al^sub 2^O^sub 3^/AlInN/GaN MOSHEMT
Medjdoub, F, Sarazin, N, Tordjman, M, Magis, M, di Forte-Poisson, M A, Knez, M, Delos, E, Gaquière, C, Delage, S L, Kohn, E
Published in Electronics letters (07.06.2007)
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Published in Electronics letters (07.06.2007)
Journal Article
Characteristics of Al sub( 2)O sub( 3)/AlInN/GaN MOSHEMT
Medjdoub, F, Sarazin, N, Tordjman, M, Magis, M, di Forte-Poisson, M A, Knez, M, Delos, E, Gaquiere, C, Delage, S L, Kohn, E
Published in Electronics letters (01.06.2007)
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Published in Electronics letters (01.06.2007)
Journal Article
X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate
Sarazin, N, Jardel, O, Morvan, E, Aubry, R, Laurent, M, Magis, M, Tordjman, M, Alloui, M, Drisse, O, Di Persio, J, Poisson, M A di Forte, Delage, S L, Vellas, N, Gaquière, C, Théron, D
Published in Electronics letters (08.11.2007)
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Published in Electronics letters (08.11.2007)
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Advances and challenges in neurostimulation for headaches
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