A 256-Mcell Phase-Change Memory Chip Operating at 2 Bit/Cell
Close, G. F., Frey, U., Morrish, J., Jordan, R., Lewis, S., Maffitt, T., BrightSky, M., Hagleitner, C., Lam, C., Eleftheriou, E.
Published in IEEE transactions on circuits and systems. I, Regular papers (01.06.2013)
Published in IEEE transactions on circuits and systems. I, Regular papers (01.06.2013)
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Journal Article
12.4 1.4Gsearch/s 2Mb/mm2 TCAM using two-phase-precharge ML sensing and power-grid preconditioning to reduce Ldi/dt power-supply noise by 50
Arsovski, Igor, Fragano, Michael, Houle, Robert M., Patil, Akhilesh, Butler, Van, Kim, Raymond, Rodriguez, Ramon, Maffitt, Tom, Oler, Joseph J., Goss, John, Parkinson, Christopher, Ziegerhofer, Michael A., Burns, Steven
Published in 2017 IEEE International Solid-State Circuits Conference (ISSCC) (01.02.2017)
Published in 2017 IEEE International Solid-State Circuits Conference (ISSCC) (01.02.2017)
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Conference Proceeding
1Mb 0.41 µm2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing
Jing Li, Montoye, Robert, Ishii, Masatoshi, Stawiasz, Kevin, Nishida, Takeshi, Maloney, Kim, Ditlow, Gary, Lewis, Scott, Maffitt, Tom, Jordan, Richard, Chang, Leland, Peilin Song
Published in 2013 Symposium on VLSI Technology (01.06.2013)
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Published in 2013 Symposium on VLSI Technology (01.06.2013)
Conference Proceeding
A 16-Mb MRAM featuring bootstrapped write drivers
Gogl, D., Arndt, C., Barwin, J.C., Bette, A., DeBrosse, J., Gow, E., Hoenigschmid, H., Lammers, S., Lamorey, M., Yu Lu, Maffitt, T., Maloney, K., Obermaier, W., Sturm, A., Viehmann, H., Willmott, D., Wood, M., Gallagher, W.J., Mueller, G., Sitaram, A.R.
Published in IEEE journal of solid-state circuits (01.04.2005)
Published in IEEE journal of solid-state circuits (01.04.2005)
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Journal Article
Conference Proceeding
A Double-Data- Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read -Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications
Hsiang-Lan Lung, Miller, Christopher P., Chia-Jung Chen, Lewis, Scott C., Morrish, Jack, Perri, Tony, Jordan, Richard C., Hsin-Yi Ho, Tu-Shun Chen, Wei-Chih Chien, Drapa, Mark, Maffitt, Tom, Heath, Jerry, Nakamura, Yutaka, Okazawa, Junka, Hosokawa, Kohji, BrightSky, Matt, Bruce, Robert, Huai-Yu Cheng, Ray, Asit, Yung-Han Ho, Chiao-Wen Yeh, Wanki Kim, Sangbum Kim, Yu Zhu, Chung Lam
Published in 2016 IEEE 8th International Memory Workshop (IMW) (01.05.2016)
Published in 2016 IEEE 8th International Memory Workshop (IMW) (01.05.2016)
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Conference Proceeding
1Mb 0.41 µm2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing
Jing Li, Montoye, Robert, Ishii, Masatoshi, Stawiasz, Kevin, Nishida, Takeshi, Maloney, Kim, Ditlow, Gary, Lewis, Scott, Maffitt, Tom, Jordan, Richard, Chang, Leland, Peilin Song
Published in 2013 Symposium on VLSI Circuits (01.06.2013)
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Published in 2013 Symposium on VLSI Circuits (01.06.2013)
Conference Proceeding
A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory
Jing Li, Chao-I Wu, Lewis, S C, Morrish, J, Tien-Yen Wang, Jordan, R, Maffitt, T, Breitwisch, M, Schrott, A, Cheek, R, Hsiang-Lan Lung, Chung Lam
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
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Conference Proceeding