Search Results - "Maezawa, Koichi" :: K.UTB vyhledávací portál

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Noise Floor Reduction in Frequency Delta-Sigma Modulation Microphone Sensors

by Maezawa, Koichi, Mori, Masayuki, Andoh, Hiroya
Published in Sensors (Basel, Switzerland) (16.05.2021)

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Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated Bonding Technologies

by Matsuura, Keita, Liang, Jianbo, Maezawa, Koichi, Shigekawa, Naoteru
Published in IEEE transactions on electron devices (01.09.2019)

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Influence of Composition Ratio of In and Ga Atoms of InGaSb Bi-layer on Growth of InGaSb Thin Films on Si(111) Substrate

by Mori, Masayuki, Inoue, Jotaro, Maezawa, Koichi
Published in E-journal of surface science and nanotechnology (08.12.2022)

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Experimental demonstration of strain detection using resonant tunneling delta‐sigma modulation sensors

by Tajika, Takumi, Kakutani, Yuichiro, Mori, Masayuki, Maezawa, Koichi
Published in Physica status solidi. A, Applications and materials science (01.03.2017)

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Low-loss characteristics of coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates

by Yonekura, Kenya, Kawamoto, Tasuku, Liang, Jianbo, Shikoh, Eiji, Maezawa, Koichi, Shigekawa, Naoteru
Published in Japanese Journal of Applied Physics (01.06.2022)

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An investigation of the crystalline nature for GaSb films on Si(111) at varied growth temperature and growth rate

by Monzur-Ul-Akhir, A. A. Md, Mori, Masayuki, Maezawa, Koichi
Published in Japanese Journal of Applied Physics (01.08.2019)

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Growth Nature of InSb Channel Layer on Heteroepitaxial Films of InGaSb Layer on GaSb/Si(111)-√3 × √3-Ga Surface Phase

by Monzur-Ul-Akhir, Ahmed Ali Mohammad, Mori, Masayuki, Maezawa, Koichi
Published in E-journal of surface science and nanotechnology (01.01.2018)

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Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy

by Mori, Masayuki, Yasui, Yuichiro, Nakayama, Koji, Nakatani, Kimihiko, Maezawa, Koichi
Published in Japanese Journal of Applied Physics (01.02.2012)

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Effective Mobility Enhancement in Al2O3/InSb/Si Quantum Well Metal Oxide Semiconductor Field Effect Transistors for Thin InSb Channel Layers

by Ito, Taihei, Kadoda, Azusa, Nakayama, Koji, Yasui, Yuichiro, Mori, Masayuki, Maezawa, Koichi, Miyazaki, Eiji, Mizutani, Takashi
Published in Jpn J Appl Phys (25.04.2013)

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Effects of In and Sb mono-layers to form rotated InSb films on a Si(1 1 1) substrate

by Saito, Mitsufumi, Mori, Masayuki, Maezawa, Koichi
Published in Applied surface science (30.07.2008)

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A new resonant tunneling logic gate employing monostable-bistable transition

by MAEZAWA, K, MIZUTANI, T
Published in Japanese Journal of Applied Physics (1993)

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Fluidic Self-Assembly Using Molten Ga Bumps and Its Application to Resonant Tunneling Diodes

by Nakano, Jun, Shibata, Tomoaki, Morita, Hiroki, Sakamoto, Hiroshi, Mori, Masayuki, Maezawa, Koichi
Published in Japanese Journal of Applied Physics (01.11.2013)

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Characterization of Al2O3/InSb/Si MOS diodes having various InSb thicknesses grown on Si(1 1 1) substrates

by Kadoda, Azusa, Iwasugi, Tatsuya, Nakatani, Kimihiko, Nakayama, Koji, Mori, Masayuki, Maezawa, Koichi, Miyazaki, Eiji, Mizutani, Takashi
Published in Semiconductor science and technology (22.02.2012)

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Quasi-normally-off AlGaN/GaN HEMTs fabricated by fluoride-based plasma treatment

by Mizuno, Hiroaki, Kishimoto, Shigeru, Maezawa, Koichi, Mizutani, Takashi
Published in Physica status solidi. C (01.06.2007)

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Possibility of Terahertz Amplification by Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs

by Maezawa, Koichi, Sakamoto, Tomoya, Kasahara, Koji, Mori, Masayuki
Published in Japanese Journal of Applied Physics (01.12.2009)

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Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy

by Mori, Masayuki, Yasui, Yuichiro, Nakayama, Koji, Nakatani, Kimihiko, Maezawa, Koichi
Published in Japanese Journal of Applied Physics (01.02.2012)

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Step Hall Measurement of InSb Films Grown on Si(111) Substrate Using InSb Bilayer

by Nakayama, Koji, Nakatani, Kimihiko, Khamseh, Sara, Mori, Masayuki, Maezawa, Koichi
Published in Japanese Journal of Applied Physics (01.01.2011)

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Improved Bias Stability of the Resonant Tunneling Diode Pair Oscillators Integrated on an AlN Ceramic Substrate

by Maezawa, Koichi, Kamegai, Naoki, Kishimoto, Shigeru, Mizutani, Takashi, Akamatsu, Kazuhiro
Published in Japanese Journal of Applied Physics (01.04.2009)

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