Phenylephrine increases cardiac output by raising cardiac preload in patients with anesthesia induced hypotension
Kalmar, A. F., Allaert, S., Pletinckx, P., Maes, J.-W., Heerman, J., Vos, J. J., Struys, M. M. R. F., Scheeren, T. W. L.
Published in Journal of clinical monitoring and computing (01.12.2018)
Published in Journal of clinical monitoring and computing (01.12.2018)
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Journal Article
The pelvifemoral rhythm in cam-type femoroacetabular impingement
Van Houcke, J, Pattyn, C, Vanden Bossche, L, Redant, C, Maes, J.-W, Audenaert, E.A
Published in Clinical biomechanics (Bristol) (01.01.2014)
Published in Clinical biomechanics (Bristol) (01.01.2014)
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Journal Article
Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI
Aoulaiche, M., Houssa, M., Deweerd, W., Trojman, L., Conard, T., Maes, J.W., De Gendt, S., Groeseneken, G., Maes, H.E., Heyns, M.M.
Published in IEEE electron device letters (01.07.2007)
Published in IEEE electron device letters (01.07.2007)
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Journal Article
High- k dielectrics for future generation memory devices (Invited Paper)
Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., Wouters, D.J.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Band alignment between (100)Si and Hf-based complex metal oxides
Afanas’ev, V.V., Stesmans, A., Zhao, C., Caymax, M., Rittersma, Z.M., Maes, J.W.
Published in Microelectronic engineering (01.06.2005)
Published in Microelectronic engineering (01.06.2005)
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Journal Article
Conference Proceeding
Vanishing tumour of the colon ascendens due to acquired type II C1-inhibitor deficiency
Ebo, D G, De Knop, K J, Maes, J W, De Clerck, L S, Stevens, W J
Published in Acta clinica belgica (English ed. Online) (01.03.2010)
Published in Acta clinica belgica (English ed. Online) (01.03.2010)
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Journal Article
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET
Arimura, H., Brus, S., Franco, J., Oniki, Y., Vandooren, A., Conard, T., Chan, B.-T., Kannan, B., Samiee, M., Li, W., Deminskyi, P., Shero, E., Bakke, J., Jourdan, N., Verni, G. Alessio, Maes, J. W., Givens, M., Ragnarsson, L.-A., Mitard, J., Litta, E. Dentoni, Horiguchi, N.
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
(Invited) Current Status of High-k and Metal Gates in CMOS
Wilk, Glen D., Verghese, Mohith, Chen, Peijun, Maes, Jan Willem
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
In-line electrical metrology for high-K gate dielectrics deposited by atomic layer CVD
DE WITTE, H, PASSEFORT, S, BESTING, W, MAES, J. W. H, EASON, K, YOUNG, E, RITTERSMA, Z. M, HEYNS, M
Published in Journal of the Electrochemical Society (01.09.2003)
Published in Journal of the Electrochemical Society (01.09.2003)
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Journal Article
Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm
Zhou, X., Waldron, N., Boccardi, G., Sebaai, F., Merckling, C., Eneman, G., Sioncke, S., Nyns, L., Opdebeeck, A., Maes, J. W., Xie, Q., Givens, M., Tang, F., Jiang, X., Guo, W., Kunert, B., Teugels, L., Devriendt, K., Hernandez, A. Sibaja, Franco, J., van Dorp, D., Barla, K., Collaert, N., Thean, A. V-Y
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
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Conference Proceeding
Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications
REBISCOUL, D, FAVIER, S, BARNES, J.-P, MAES, J. W, MARTIN, F
Published in Microelectronic engineering (01.03.2010)
Published in Microelectronic engineering (01.03.2010)
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Conference Proceeding
Journal Article
Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]
Popovici, M., Van Elshocht, S., Menou, N., Swerts, J., Pierreux, D., Delabie, A., Brijs, B., Conard, T., Opsomer, K., Maes, J. W., Wouters, D. J., Kittl, J. A.
Published in Journal of the Electrochemical Society (2010)
Published in Journal of the Electrochemical Society (2010)
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Journal Article
Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash
Rachidi, S., Ramesh, S., Tierno, D., Donadio, G. L., Pacco, A., Maes, J. W., Jeong, Y., Arreghini, A., Van Den Bosch, G., Rosmeulen, M.
Published in 2024 IEEE International Memory Workshop (IMW) (12.05.2024)
Published in 2024 IEEE International Memory Workshop (IMW) (12.05.2024)
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Conference Proceeding
Selective ALD Mo Deposition in 10nm Contacts
van der Veen, Marleen H., Maes, J. W., Pedreira, O. Varela, Zhu, C., Tierno, D., Datta, S., Jourdan, N., Decoster, S., Wu, C., Mousa, M., Byun, Y., Struyf, H., Park, S., Tokei, Z.
Published in 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) (01.05.2023)
Published in 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) (01.05.2023)
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Conference Proceeding
Buried Power Rail Metal exploration towards the 1 nm Node
Gupta, A., Radisic, D., Maes, J. W., Pedreira, O. Varela, Soulie, J-P., Jourdan, N., Mertens, H., Bandyopadhyay, S., Le, Q. T., Pacco, A., Heylen, N., Vandersmissen, K., Devriendt, K., Zhu, C., Datta, S., Sebaai, F., Wang, S., Mousa, M., Lee, J., Geypen, J., De Wachter, B., Chehab, B., Salahuddin, S. M., Murdoch, G., Biesemans, S., Tokei, Zs, Litta, E. Dentoni, Horiguchi, N.
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
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Conference Proceeding
Gas source MBE growth of Si/SiGe device materials
WERNER, K, STORM, A, ZIJLSTRA, T, RADELAAR, S, BUTZKE, S, MAES, J. W, VAN ROOY, M, ALKEMADE, P, ALGRA, E, SOMERS, M, DE LANGE, B, VAN DER DRIFT, E
Published in Journal of crystal growth (01.07.1996)
Published in Journal of crystal growth (01.07.1996)
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Conference Proceeding
Atomic layer deposition of transition metal chalcogenide TaSx using Ta[N(CH3)2]3[NC(CH3)3] precursor and H2S plasma
Deijkers, J. H., Thepass, H., Verheijen, M. A., Sprey, H., Maes, J. W., Kessels, W. M. M., Mackus, A. J. M.
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01.12.2024)
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01.12.2024)
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Journal Article
Evaluation of Atomic Layer Deposited NbN and NbSiN as Metal Gate Materials
Van Hoornick, N., De Witte, H., Witters, T., Zhao, C., Conard, T., Huotari, H., Swerts, J., Schram, T., Maes, J. W., De Gendt, S., Heyns, M.
Published in Journal of the Electrochemical Society (2006)
Published in Journal of the Electrochemical Society (2006)
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Journal Article
Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey
DEWEERD, W, KAUSHIK, V, DE GENDT, S, HEYNS, M, CHEN, J, SHIMAMOTO, Y, SCHRAM, T, RAGNARSSON, L.-A, DELABIE, A, PANTISANO, L, EYCKENS, B, MAES, J. W
Published in Microelectronics and reliability (01.05.2005)
Published in Microelectronics and reliability (01.05.2005)
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Conference Proceeding
Journal Article
Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow
Waldron, N., Sioncke, S., Franco, J., Nyns, L., Vais, A., Zhou, X., Lin, H. C., Boccardi, G., Maes, J. W., Xie, Q., Givens, M., Tang, F., Jiang, X., Chiu, E., Opdebeeck, A., Merckling, C., Sebaai, F., van Dorp, D., Teugels, L., Hernandez, A. Sibaja, De Meyer, K., Barla, K., Collaert, N., Thean, Y.-V
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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