Proposal of oxide-formed two-step wet etching process for n-GaN
Kiyoto, Yasuharu, Makie, Tetsuo, Fujioka, Hiroshi, Maeda, Narihiko
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
Get full text
Journal Article
Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors
Hiroki, Masanobu, Oda, Yasuhiro, Watanabe, Noriyuki, Maeda, Narihiko, Yokoyama, Haruki, Kumakura, Kazuhide, Yamamoto, Hideki
Published in Journal of crystal growth (01.11.2013)
Published in Journal of crystal growth (01.11.2013)
Get full text
Journal Article
Systematic Study of Insulator Deposition Effect (Si 3 N 4 , SiO 2 , AlN, and Al 2 O 3 ) on Electrical Properties in AlGaN/GaN Heterostructures
Maeda, Narihiko, Hiroki, Masanobu, Watanabe, Noriyuki, Oda, Yasuhiro, Yokoyama, Haruki, Yagi, Takuma, Makimoto, Toshiki, Enoki, Takatomo, Kobayashi, Takashi
Published in Japanese Journal of Applied Physics (01.02.2007)
Published in Japanese Journal of Applied Physics (01.02.2007)
Get full text
Journal Article
Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
Hiroki, Masanobu, Watanabe, Noriyuki, Maeda, Narihiko, Yokoyama, Haruki, Kumakura, Kazuhide, Yamamoto, Hideki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
Get full text
Journal Article
Novel InN growth method under In-rich condition on GaN/Al2O3 (0001) templates
Yamaguchi, Tomohiro, Muto, Daisuke, Araki, Tsutomu, Maeda, Narihiko, Nanishi, Yasushi
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
Get full text
Journal Article
Superior device characteristics of needle-contact Ge Schottky barrier diodes for low-power applications
Ando, Riku, Suda, Yoriko, Maeda, Narihiko
Published in Japanese Journal of Applied Physics (29.02.2024)
Published in Japanese Journal of Applied Physics (29.02.2024)
Get full text
Journal Article
Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures
Maeda, Narihiko, Hiroki, Masanobu, Makimoto, Toshiki, Enoki, Takatomo, Kobayashi, Takashi
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
Get full text
Journal Article
RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
Ye, Haitao, Kasu, Makoto, Ueda, Kenji, Yamauchi, Yoshiharu, Maeda, Narihiko, Sasaki, Satoshi, Makimoto, Toshiki
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
Get full text
Journal Article
Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors designed for high-power applications
Maeda, Narihiko, Tsubaki, Kotaro, Saitoh, Tadashi, Tawara, Takehiko, Kobayashi, Naoki
Published in Optical materials (01.07.2003)
Published in Optical materials (01.07.2003)
Get full text
Journal Article
Conference Proceeding
Growth of Al Ga1−N (0x0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE
Nozawa, Kazuhiko, Maeda, Narihiko, Hirayama, Yoshiro, Kobayashi, Naoki
Published in Journal of crystal growth (01.06.1998)
Published in Journal of crystal growth (01.06.1998)
Get full text
Journal Article
Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
Hiroki, Masanobu, Maeda, Narihiko, Kobayashi, Takashi
Published in Applied physics express (01.11.2008)
Published in Applied physics express (01.11.2008)
Get full text
Journal Article
High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
Maeda, Narihiko, Hiroki, Masanobu, Sasaki, Satoshi, Harada, Yuichi
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
Get full text
Journal Article