Focused ion beam induced deposition in the high current density region
TAKAHASHI, Y, MADOKORO, Y, ISHITANI, T
Published in Japanese Journal of Applied Physics (01.11.1991)
Published in Japanese Journal of Applied Physics (01.11.1991)
Get full text
Journal Article
Growth of tungsten film by focused ion beam induced deposition
TAKAHASHI, Y, MADOKORO, Y, ISHITANI, T
Published in Japanese Journal of Applied Physics (15.03.1991)
Published in Japanese Journal of Applied Physics (15.03.1991)
Get full text
Journal Article
Nanometre-sized GaAs wires grown by organo-metallic vapour-phase epitaxy
Hiruma, Kenji, Haraguchi, Keiichi, Yazawa, Masamitsu, Madokoro, Yuuichi, Katsuyama, Toshio
Published in Nanotechnology (14.06.2006)
Published in Nanotechnology (14.06.2006)
Get full text
Journal Article
Projection ion beam machining apparatus
Kawanami, Yoshimi, Umemura, Kaoru, Madokoro, Yuuichi, Tomimatsu, Satoshi
Year of Publication 24.06.2003
Get full text
Year of Publication 24.06.2003
Patent
METHODS FOR DEVICE TRANSPLANTATION
OHNISHI; TSUYOSHI, MADOKORO; YUUICHI, KAWANAMI; YOSHIMI, UMEMURA; KAORU, ISHITANI; TOHRU
Year of Publication 09.06.1992
Get full text
Year of Publication 09.06.1992
Patent
METHODS FOR DEVICE TRANSPLANTATION
OHNISHI, TSUYOSHI, KAWANAMI, YOSHIMI, UMEMURA, KAORU, ISHITANI, TOHRU, MADOKORO, YUUICHI
Year of Publication 20.05.1992
Get full text
Year of Publication 20.05.1992
Patent
Methods for device transplantation
OHNISHI, TSUYOSHI, KAWANAMI, YOSHIMI, UMEMURA, KAORU, ISHITANI, TOHRU, MADOKORO, YUUICHI
Year of Publication 14.11.1990
Get full text
Year of Publication 14.11.1990
Patent
Method of forming weak-link Josephson junction, and superconducting device employing the junction
MIYAUCHI, KATSUKI, FUTAMOTO, MASAAKI, TAKAGI, KAZUMASA, HIRATANI, MASAHIKO, FUKAZAWA, TOKUUMI, KAWANAMI, YOSHIMI, AIDA, TOSHIYUKI, HONDA, YUKIO, MADOKORO, YUUICHI
Year of Publication 27.03.1996
Get full text
Year of Publication 27.03.1996
Patent
METHOD OF FORMING WEAK-LINK JOSEPHSON JUNCTION, AND SUPERCONDUCTING DEVICE EMPLOYING THE JUNCTION
MADOKORO; YUUICHI, FUKAZAWA; TOKUUMI, KAWANAMI; YOSHIMI, MIYAUCHI; KATSUKI, AIDA; TOSHIYUKI, FUTAMOTO; MASAAKI, TAKAGI; KAZUMASA, HIRATANI; MASAHIKO, HONDA; YUKIO
Year of Publication 31.12.1991
Get full text
Year of Publication 31.12.1991
Patent
METHOD OF FORMING WEAK-LINK JOSEPHSON JUNCTION, AND SUPERCONDUCTING DEVICE EMPLOYING THE JUNCTION
MIYAUCHI, KATSUKI, FUTAMOTO, MASAAKI, TAKAGI, KAZUMASA, HIRATANI, MASAHIKO, FUKAZAWA, TOKUUMI, KAWANAMI, YOSHIMI, AIDA, TOSHIYUKI, HONDA, YUKIO, MADOKORO, YUUICHI
Year of Publication 02.05.1990
Get full text
Year of Publication 02.05.1990
Patent
Method of forming weak-link Josephson junction, and superconducting device employing the junction
MIYAUCHI, KATSUKI, FUTAMOTO, MASAAKI, TAKAGI, KAZUMASA, HIRATANI, MASAHIKO, FUKAZAWA, TOKUUMI, KAWANAMI, YOSHIMI, AIDA, TOSHIYUKI, HONDA, YUKIO, MADOKORO, YUUICHI
Year of Publication 18.04.1990
Get full text
Year of Publication 18.04.1990
Patent
SOI process for forming a thin film transistor using solid phase epitaxy
TAMURA; MASAO, MURAKAMI; EIICHI, NATSUAKI; NOBUYOSHI, MADOKORO; YUUICHI, SHUKURI; SHOJI, SUZUKI; TADASHI, WADA; YASUO, MONIWA; MASAHIRO, MIYAO; MASANOBU, WARABISAKO; TERUNORI, OHYU; KIYONORI
Year of Publication 28.02.1989
Get full text
Year of Publication 28.02.1989
Patent
Methode zur Bildung eines Schwach-Kopplungs-Josephson-Übergangs und supraleitende Einrichtung, welche diesen Übergang benutzt
TAKAGI, KAZUMASA, TOYKO, JP, KAWANAMI, YOSHIMI, FUCHU-SHI TOKYO, JP, HIRATANI, MASAHIKO, AKISHIMA-SHI TOKYO, JP, HONDA, YUKIO, FUCHU-SHI TOKYO, JP, FUTAMOTO, MASAAKI, KANAGAWA, JP, FUKAZAWA, TOKUUMI, TACHIKAWA-SHI TOKYO, JP, MADOKORO, YUUICHI, KOKUBUNJI-SHI TOKYO, JP, AIDA, TOSHIYUKI, CHOFU-SHI TOKYO, JP, MIYAUCHI, KATSUKI, HINO-SHI TOKYO, JP
Year of Publication 28.11.1996
Get full text
Year of Publication 28.11.1996
Patent