Infrared Barrier Detectors With Metamorphic InAsSb Absorbers on GaAs Substrates
Gawron, Waldemar, Madejczyk, Pawel, Martyniuk, Piotr, Krishna, Sanjay
Published in IEEE sensors journal (01.05.2024)
Published in IEEE sensors journal (01.05.2024)
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Journal Article
InAsSb-Based Infrared Photodetectors: Thirty Years Later On
Rogalski, Antoni, Martyniuk, Piotr, Kopytko, Malgorzata, Madejczyk, Pawel, Krishna, Sanjay
Published in Sensors (Basel, Switzerland) (09.12.2020)
Published in Sensors (Basel, Switzerland) (09.12.2020)
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Journal Article
Comparison of type II superlattice InAs/InAsSb barrier detectors operating in the mid-wave infrared range
Kopytko, Małgorzata, Madejczyk, Paweł, Murawski, Krzysztof, Kubiszyn, Łukasz, Michalczewski, Krystian, Seredyński, Bartłomiej, Szlachetko, Kamil, Jureńczyk, Jarosław, Gawron, Waldemar, Rutkowski, Jarosław
Published in Journal of applied physics (07.07.2024)
Published in Journal of applied physics (07.07.2024)
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Journal Article
Multiple Long Wavelength Infrared MOCVD Grown HgCdTe Photodetectors for High Temperature Conditions
Gawron, Waldemar, Damiecki, Adam, Kozniewski, Andrzej, Martyniuk, Piotr, Stasiewicz, Karol A., Madejczyk, Pawel, Rutkowski, Jaroslaw
Published in IEEE sensors journal (15.02.2021)
Published in IEEE sensors journal (15.02.2021)
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Journal Article
MOCVD Grown HgCdTe Heterostructures for Medium Wave Infrared Detectors
Gawron, Waldemar, Sobieski, Jan, Manyk, Tetiana, Kopytko, Małgorzata, Madejczyk, Paweł, Rutkowski, Jarosław
Published in Coatings (Basel) (01.05.2021)
Published in Coatings (Basel) (01.05.2021)
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Journal Article
The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics
Published in Opto-electronics review
(12.01.2024)
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Journal Article
Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices
Wróbel, Jaros aw, Ciura, ukasz, Motyka, Marcin, Szmulowicz, Frank, Kolek, Andrzej, Kowalewski, Andrzej, Moszczy ski, Pawe, Dyksik, Mateusz, Madejczyk, Pawe, Krishna, Sanjay, Rogalski, Antoni
Published in Semiconductor science and technology (05.10.2015)
Published in Semiconductor science and technology (05.10.2015)
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Journal Article
Theoretical simulation of the thermoelectrically cooled HgCdTe LWIR detector for fast response operating under unbiased conditions
Martyniuk, Piotr, Madejczyk, Paweł, Kopytko, Małgorzata, Henig, Aleksandra Magdalena, Grodecki, Kacper, Gawron, Waldemar, Rutkowski, Jarosław
Published in IET optoelectronics (01.08.2018)
Published in IET optoelectronics (01.08.2018)
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Journal Article
Theoretical Simulation of a Room Temperature HgCdTe Long-Wave Detector for Fast Response − Operating Under Zero Bias Conditions
Martyniuk, Piotr, Kopytko, Małgorzata, Madejczyk, Paweł, Henig, Aleksandra, Grodecki, Kacper, Gawron, Waldemar, Rutkowski, Jarosław
Published in Metrology and Measurement systems (01.12.2017)
Published in Metrology and Measurement systems (01.12.2017)
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Journal Article
Analysis of Temperature Dependence of Dark Current Mechanisms in Mid-Wavelength Infrared pin Type-II Superlattice Photodiodes
Wrobel, Jaroslaw, Plis, Elena, Gawron, Waldemar, Motyka, Marcin, Martyniuk, Piotr, Madejczyk, Pawel, Kowalewski, Andrzej, Dyksik, Mateusz, Misiewicz, Jan, Krishna, Sanjay, Rogalski, Antoni
Published in Sensors and materials (2014)
Published in Sensors and materials (2014)
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Journal Article
Engineering steps for optimizing high temperature LWIR HgCdTe photodiodes
Madejczyk, Pawel, Gawron, Waldemar, Martyniuk, Piotr, Keblowski, Artur, Pusz, Wioletta, Pawluczyk, Jaroslaw, Kopytko, Malgorzata, Rutkowski, Jaroslaw, Rogalski, Antoni, Piotrowski, Jozef
Published in Infrared physics & technology (01.03.2017)
Published in Infrared physics & technology (01.03.2017)
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Journal Article