A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer
Weng, You-Chen, Lin, Yueh-Chin, Hsu, Heng-Tung, Kao, Min-Lu, Huang, Hsuan-Yao, Ueda, Daisuke, Ha, Minh-Thien-Huu, Yang, Chih-Yi, Maa, Jer-Shen, Chang, Edward-Yi, Dee, Chang-Fu
Published in Materials (18.01.2022)
Published in Materials (18.01.2022)
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Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells
Ching-Hsiang Hsu, Chang, Edward Yi, Hsun-Jui Chang, Hung-Wei Yu, Hong Quan Nguyen, Chen-Chen Chung, Jer-Shen Maa, Pande, Krishna
Published in IEEE electron device letters (01.12.2014)
Published in IEEE electron device letters (01.12.2014)
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Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
Hsu, Ching-Hsiang, Shih, Wang-Cheng, Lin, Yueh-Chin, Hsu, Heng-Tung, Hsu, Hisang-Hua, Huang, Yu-Xiang, Lin, Tai-Wei, Wu, Chia-Hsun, Wu, Wen-Hao, Maa, Jer-Shen, Iwai, Hiroshi, Kakushima, Kuniyuki, Chang, Edward Yi
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates
Hsiao, Yu-Lin, Chang, Chia-Ao, Chang, Edward Yi, Maa, Jer-Shen, Chang, Chia-Ta, Wang, Yi-Jie, Weng, You-Chen
Published in Applied physics express (01.05.2014)
Published in Applied physics express (01.05.2014)
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Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate
Hsiao, Yu-Lin, Wang, Yi-Jie, Chang, Chia-Ao, Weng, You-Chen, Chen, Yen-Yu, Chen, Kai-Wei, Maa, Jer-Shen, Chang, Edward Yi
Published in Applied physics express (01.11.2014)
Published in Applied physics express (01.11.2014)
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2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments
Luong, Tien-Tung, Tran, Binh Tinh, Ho, Yen-Teng, Wei, Ting-Wei, Wu, Yue-Han, Yen, Tzu-Chun, Wei, Lin-Lung, Maa, Jer-Shen, Chang, Edward Yi
Published in Electronic materials letters (01.05.2015)
Published in Electronic materials letters (01.05.2015)
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Reliability improvement in GaN HEMT power device using a field plate approach
Wu, Wen-Hao, Lin, Yueh-Chin, Chin, Ping-Chieh, Hsu, Chia-Chieh, Lee, Jin-Hwa, Liu, Shih-Chien, Maa, Jer-shen, Iwai, Hiroshi, Chang, Edward Yi, Hsu, Heng-Tung
Published in Solid-state electronics (01.07.2017)
Published in Solid-state electronics (01.07.2017)
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MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN buffer
Lin, Kung-Liang, Chang, Edward-Yi, Huang, Jui-Chien, Huang, Wei-Ching, Hsiao, Yu-Lin, Chiang, Chen-Hao, Li, Tingkai, Tweet, Doug, Maa, Jer-Shen, Hsu, Sheng-Teng
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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The reliability study of III–V solar cell with copper based contacts
Hsu, Ching-Hsiang, Chang, Edward Yi, Chang, Hsun-Jui, Maa, Jer-Shen, Pande, Krishna
Published in Solid-state electronics (01.12.2015)
Published in Solid-state electronics (01.12.2015)
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Journal Article
Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition
Hsiao, Chih-Jen, Ha, Minh-Thien-Huu, Liu, Chun-Kuan, Nguyen, Hong-Quan, Yu, Hung-Wei, Chang, Sheng-Po, Wong, Yuen-Yee, Maa, Jer-Shen, Chang, Shoou-Jinn, Chang, Edward Yi
Published in Journal of materials science. Materials in electronics (2017)
Published in Journal of materials science. Materials in electronics (2017)
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Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
Wong, Yuen-Yee, Chang, Edward Yi, Wu, Yue-Han, Hudait, Mantu K., Yang, Tsung-Hsi, Chang, Jet-Rung, Ku, Jui-Tai, Chou, Wu-Ching, Chen, Chiang-Yao, Maa, Jer-Shen, Lin, Yueh-Chin
Published in Thin solid films (29.07.2011)
Published in Thin solid films (29.07.2011)
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Journal Article
Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
Hsiao, Yu-Lin, Lu, Lung-Chi, Wu, Chia-Hsun, Chang, Edward Yi, Kuo, Chien-I, Maa, Jer-Shen, Lin, Kung-Liang, Luong, Tien-Tung, Huang, Wei-Ching, Chang, Chia-Hua, Dee, Chang Fu, Majlis, Burhanuddin Yeop
Published in Jpn J Appl Phys (01.02.2012)
Published in Jpn J Appl Phys (01.02.2012)
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Backscattering analysis of the successive layer structures of titanium silicides
Maa, Jer-Shen, Lin, Chien-Jung, Liu, Jui-Hsiang, Liu, Yuen-Chung
Published in Thin solid films (17.12.1979)
Published in Thin solid films (17.12.1979)
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Journal Article
Reaction of amorphous Si with cobalt silicide before disilicide formation for reducing Si consumption in SIMOX
Maa, Jer-Shen, Teng Hsu, Sheng, Ulrich, Bruce, Peng, Chien-Hsiung
Published in Thin solid films (31.10.1997)
Published in Thin solid films (31.10.1997)
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Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD
Chih-Jen Hsiao, Chun-Kuan Liu, Sa-Hoang Huynh, Thien-Huu Ha Minh, Hung-Wei Yu, Hong-Quan Nguyen, Jer-Shen Maa, Shoou-Jinn Chang, Chang, Edward Yi
Published in 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) (01.08.2014)
Published in 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) (01.08.2014)
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