First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)
Hong, T.-Z., Chang, W.-H., Agarwal, A., Huang, Y.-T., Yang, C.-Y., Chu, T.-Y., Chao, H.-Y., Chuang, Y., Chung, S.-T., Lin, J.-H., Luo, S.-M., Tsai, C.-J., Li, M.-J., Yu, X.-R., Lin, N.-C., Cho, T.-C., Sung, P.-J., Su, C.-J., Luo, G.-L., Hsueh, F.-K., Lin, K.-L., Ishii, H., Irisawa, T., Maeda, T., Wu, C.-T., Ma, W. C.-Y., Lu, D.-D., Kao, K.-H., Lee, Y.-J., Chen, H. J.-H., Lin, C.-L., Chuang, R. W., Huang, K.-P., Samukawa, S., Li, Y.-M., Tarng, J.-H., Chao, T.-S., Miura, M., Huang, G.-W., Wu, W.-F., Li, J.-Y., Shieh, J.-M., Wang, Y.-H., Yeh, W.-K.
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
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Conference Proceeding
Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization
Chen, Y.-C., Chou, J.-P., Chen, K.-C., Lin, J.-Y., Ma, W. C.-Y., Kao, K.-H., Chiang, M.-H., Wang, Y.-H.
Published in IEEE transactions on electron devices (01.08.2024)
Published in IEEE transactions on electron devices (01.08.2024)
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Journal Article
Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size
Yu, X.-R., Chuang, M.-H., Chang, S.-W., Chang, W.-H., Hong, T.-C., Chiang, C.-H., Lu, W.-H., Yang, C.-Y., Chen, W.-J., Lin, J.-H., Wu, P.-H., Sun, T.-C., Kola, S., Yang, Y.-S., Da, Yun, Sung, P.-J., Wu, C.-T., Cho, T.-C., Luo, G.-L., Kao, K.-H., Chiang, M.-H., Ma, W. C.-Y., Su, C.-J., Chao, T.-S., Maeda, T., Samukawa, S., Li, Y., Lee, Y.-J., Wu, W.-F., Tarng, J.-H., Wang, Y.-H.
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
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Conference Proceeding
MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization
Lin, W.-C., Huang, H.-P., Kao, K.-H., Chiang, M.-H., Lu, D., Hsu, W.-C., Wang, Y.-H., Ma, W.C.-Y., Tsai, H.-H., Lee, Y.-J., Chiang, H.-L., Wang, J.-F., Radu, I.
Published in ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) (11.09.2023)
Published in ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) (11.09.2023)
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Conference Proceeding
Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications
Sung, P.-J., Chang, C.-Y., Chen, L.-Y., Kao, K.-H., Su, C.-J., Liao, T.-H., Fang, C.-C., Wang, C.-J., Hong, T.-C., Jao, C.-Y., Hsu, H.-S., Luo, S.-X., Wang, Y.-S., Huang, H.-F., Li, J.-H., Huang, Y.-C., Hsueh, F.-K., Wu, C.-T., Huang, Y.-M., Hou, F.-J., Luo, G.-L., Huang, Y.-C., Shen, Y.-L., Ma, W. C.-Y., Huang, K.-P., Lin, K.-L., Samukawa, S., Li, Y., Huang, G.-W, Lee, Y.-J., Li, J.-Y., Wu, W.-F., Shieh, J.-M., Chao, T.-S., Yeh, W.-K., Wang, Y.-H.
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Fabrication of \Omega -gated Negative Capacitance FinFETs and SRAM
Sung, P.-J., Su, C.-J., Lu, D. D., Luo, S.-X., Kao, K.-H., Ciou, J.-Y., Jao, C.-Y., Hsu, H.-S., Wang, C.-J., Hong, T.-C., Liao, T.-H., Fang, C.-C., Wang, Y.-S., Huang, H.-F., Li, J.-H., Huang, Y.-C., Hsueh, F.-K., Wu, C.-T., Huang, Y.-C., Ma, W. C.-Y., Huang, K.-P., Lee, Y.-J., Chao, T.-S., Li, J.-Y., Wu, W.-F., Yeh, W.-K., Wang, Y.-H.
Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)
Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)
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First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications
Chang, S.-W., Li, J.-H., Huang, M.-K., Huang, Y.-C., Huang, S.-T., Wang, H.-C., Huang, Y.-J., Wang, J.-Y., Yu, L. - W, Huang, Y.-F., Hsueh, F. - K., Sung, P.-J., Wu, C.-T., Ma, W. C.-Y., Kao, K.-H., Lee, Y. - J., Lin, C.-L., Chuang, R. W., Huang, K.-P., Samukawa, S., Li, Y., Lee, W. - H., Chu, T-Y., Chao, T.-S., Huang, G. - W., Wu, W.-F., Li, J. - Y., Shieh, J.-M., Yeh, W. - K., Wang, Y.-H., Lu, D. D., Wang, C.-J., Lin, N.-C., Su, C.-J., Lo, S.-H., Huang, H.-F.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications
Chang, S.-W., Lu, T.-H., Yang, C.-Y., Yeh, C.-J., Huang, M.-K., Meng, C.-F., Chen, P.-J., Chang, T.-H., Chang, Y.-S., Jhu, J.-W., Hong, T.-Z., Ke, C.-C., Yu, X.-R., Lu, W.-H., Baig, M. A., Cho, T.-C., Sung, P.-J., Su, C.-J., Hsueh, F.-K., Chen, B.-Y., Hu, H.-H., Wu, C.-T., Lin, K.-L., Ma, W. C.-Y., Lu, D.-D., Kao, K.-H., Lee, Y.-J., Lin, C.-L., Huang, K.-P., Chen, K.-M., Li, Y., Samukawa, S., Chao, T.-S., Huang, G.-W., Wu, W.-F., Lee, W.-H., Li, J.-Y., Shieh, J.-M., Tarng, J.-H., Wang, Y.-H., Yeh, W.-K.
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
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Collective Band Structures and Identification of One-Phonon and Two-Phonon γ-Vibrational Bands in 109Tc
GU Long ZHU Sheng-Jiang J. H. Hamilton A. V. Ramayya J. K. Hwang S. H. Liu WANG Jian-Guo Y. X. Luo J. O. Rasmussen I. Y. Lee XU Qiang E. Y. Yeoh W. C. Ma
Published in Chinese physics letters (2010)
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Published in Chinese physics letters (2010)
Journal Article
The Lanthanum oxide capping layer induced flat-band roll-off behaviors in high-κ/metal-gate NMOSFETs with 28nm CMOS technology
Wen-Han Hung, Yean-Kuen Fang, Ma, W. C.-Y, Tsai-Fu Chen, Tzyy-Ming Cheng, Feng-Renn Juang
Published in The 4th IEEE International NanoElectronics Conference (01.06.2011)
Published in The 4th IEEE International NanoElectronics Conference (01.06.2011)
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