RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures
Qin, Guoxuan, Yan, Yuexing, Jiang, Ningyue, Ma, Jianguo, Ma, Pingxi, Racanelli, Marco, Ma, Zhenqiang
Published in Microelectronics and reliability (01.11.2012)
Published in Microelectronics and reliability (01.11.2012)
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Journal Article
Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier
Qin, Guoxuan, Jiang, Ningyue, Seo, Jung-Hun, Cho, Namki, Ponchak, George E, van der Weide, Daniel, Ma, Pingxi, Stetson, Scott, Racanelli, Marco, Ma, Zhenqiang
Published in Semiconductor science and technology (10.12.2010)
Published in Semiconductor science and technology (10.12.2010)
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Journal Article
Thermal resistance of SiGe HBTs at high power densities
Li, Hui, Ma, Zhenqiang, Ma, Pingxi, Racanelli, Marco
Published in Semiconductor science and technology (01.01.2007)
Published in Semiconductor science and technology (01.01.2007)
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Journal Article
Conference Proceeding
Proton radiation tolerance of SiGe power HBTs
Jiang, Ningyue, Ma, Zhenqiang, Ma, Pingxi, Racanelli, Marco
Published in Semiconductor science and technology (01.01.2007)
Published in Semiconductor science and technology (01.01.2007)
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Journal Article
Conference Proceeding
Impact of Proton Radiation on the Large-Signal Power Performance of SiGe Power HBTs
Ningyue Jiang, Zhenqiang Ma, Pingxi Ma, Racanelli, M.
Published in IEEE transactions on nuclear science (01.08.2006)
Published in IEEE transactions on nuclear science (01.08.2006)
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Journal Article
Power Performance Characteristics of SiGe Power HBTs at Extreme Temperatures
Guogong Wang, Guoxuan Qin, Zhenqiang Ma, Pingxi Ma, Racanelli, M., Ponchak, G.E.
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
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Conference Proceeding
Millimeter-wave silicon MMIC interconnect and coupler using multilayer polyimide technology
Juno Kim, Yongxi Qian, Guojin Feng, Pingxi Ma, Chang, M.F., Itoh, T.
Published in IEEE transactions on microwave theory and techniques (01.09.2000)
Published in IEEE transactions on microwave theory and techniques (01.09.2000)
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Journal Article
Microwave Flexible Electronics Directly Transformed from Foundry‐Produced, Multilayered Monolithic Integrated Circuits
Qin, Guoxuan, Jung, Yei Hwan, Zhang, Huilong, Jiang, Ningyue, Ma, Pingxi, Stetson, Scott, Racanelli, Marco, Ma, Zhenqiang
Published in Advanced electronic materials (01.07.2022)
Published in Advanced electronic materials (01.07.2022)
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Journal Article
A novel low-loss low-crosstalk interconnect for broad-band mixed-signal silicon MMICs
Juno Kim, Yongxi Qian, Guojin Feng, Pingxi Ma, Judy, J., Chang, M.F., Itoh, T.
Published in IEEE transactions on microwave theory and techniques (01.09.1999)
Published in IEEE transactions on microwave theory and techniques (01.09.1999)
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Journal Article
Source identification and control of 1/f noise in AlGaAs/GaAs HBTs by using an on-ledge Schottky diode
Pingxi Ma, Chang, M.F., Zampardi, P., Canfield, P., Sheu, J., Li, G.P.
Published in IEEE electron device letters (01.11.2000)
Published in IEEE electron device letters (01.11.2000)
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Journal Article
Modulating HBT's current gain by using externally biased on-ledge Schottky diode [GaAs devices]
Pingxi Ma, Yuefei Yang, Zampardi, P., Huang, R.T., Chang, M.F.
Published in IEEE electron device letters (01.08.2000)
Published in IEEE electron device letters (01.08.2000)
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Journal Article
The RF front-end single-chip SOI solution
Pingxi Ma, Racanelli, M.
Published in 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (01.10.2008)
Published in 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (01.10.2008)
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Conference Proceeding
Dc characteristics of proton radiated SiGe power HBTs at cryogenic temperature
Guoxuan Qin, Ningyue Jiang, Jianguo Ma, Zhenqiang Ma, Pingxi Ma, Racanelli, M.
Published in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits (01.11.2011)
Published in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits (01.11.2011)
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Conference Proceeding
Assessment of influence of interconnect parasitics on RF Performance of multi-finger SiGe power HBTs
Ningyue Jiang, Zhenqiang Ma, Pingxi Ma, Racanelli, M.
Published in 2007 European Microwave Conference (01.10.2007)
Published in 2007 European Microwave Conference (01.10.2007)
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Conference Proceeding
Influence of collector region design on SiGe power HBT linearity characteristics
Guoxuan Qin, Jianguo Ma, Guogong Wang, Zhenqiang Ma, Pingxi Ma, Racanelli, Marco
Published in 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) (01.12.2010)
Published in 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) (01.12.2010)
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Conference Proceeding
Impact of Ballast Resistor Implementations on Linearity and RF Performance of Common-Base SiGe Power HBTs
Hui Li, Guoxuan Qin, Zhenqiang Ma, Pingxi Ma, Racanelli, M.
Published in 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (01.01.2008)
Published in 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (01.01.2008)
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Conference Proceeding