Lasing in direct-bandgap GeSn alloy grown on Si
Wirths, S., Geiger, R., von den Driesch, N., Mussler, G., Stoica, T., Mantl, S., Ikonic, Z., Luysberg, M., Chiussi, S., Hartmann, J. M., Sigg, H., Faist, J., Buca, D., Grützmacher, D.
Published in Nature photonics (01.02.2015)
Published in Nature photonics (01.02.2015)
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Journal Article
Direct Bandgap Group IV Epitaxy on Si for Laser Applications
von den Driesch, N, Stange, D, Wirths, S, Mussler, G, Holländer, B, Ikonic, Z, Hartmann, J. M, Stoica, T, Mantl, S, Grützmacher, D, Buca, D
Published in Chemistry of materials (14.07.2015)
Published in Chemistry of materials (14.07.2015)
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Journal Article
Study of GeSn based heterostructures: towards optimized group IV MQW LEDs
Stange, D, von den Driesch, N, Rainko, D, Schulte-Braucks, C, Wirths, S, Mussler, G, Tiedemann, A T, Stoica, T, Hartmann, J M, Ikonic, Z, Mantl, S, Grützmacher, D, Buca, D
Published in Optics express (25.01.2016)
Published in Optics express (25.01.2016)
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Journal Article
Room-temperature high-frequency transport of dirac fermions in epitaxially grown Sb2Te3- and Bi2Te3-based topological insulators
Olbrich, P, Golub, L E, Herrmann, T, Danilov, S N, Plank, H, Bel'kov, V V, Mussler, G, Weyrich, Ch, Schneider, C M, Kampmeier, J, Grützmacher, D, Plucinski, L, Eschbach, M, Ganichev, S D
Published in Physical review letters (29.08.2014)
Published in Physical review letters (29.08.2014)
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Journal Article
Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3 topological insulator layers
Weyrich, C, Drögeler, M, Kampmeier, J, Eschbach, M, Mussler, G, Merzenich, T, Stoica, T, Batov, I E, Schubert, J, Plucinski, L, Beschoten, B, Schneider, C M, Stampfer, C, Grützmacher, D, Schäpers, Th
Published in Journal of physics. Condensed matter (17.10.2016)
Published in Journal of physics. Condensed matter (17.10.2016)
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Journal Article
SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications
Wirths, S., Buca, D., Ikonic, Z., Harrison, P., Tiedemann, A.T., Holländer, B., Stoica, T., Mussler, G., Breuer, U., Hartmann, J.M., Grützmacher, D., Mantl, S.
Published in Thin solid films (30.04.2014)
Published in Thin solid films (30.04.2014)
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Journal Article
Conference Proceeding
Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs
Wirths, S, Troitsch, R, Mussler, G, Hartmann, J-M, Zaumseil, P, Schroeder, T, Mantl, S, Buca, D
Published in Semiconductor science and technology (01.05.2015)
Published in Semiconductor science and technology (01.05.2015)
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Journal Article
MBE growth optimization of topological insulator Bi2Te3 films
KRUMRAIN, J, MUSSLER, G, BORISOVA, S, STOICA, T, PLUCINSKI, L, SCHNEIDER, C. M, GRÜTZMACHER, D
Published in Journal of crystal growth (01.06.2011)
Published in Journal of crystal growth (01.06.2011)
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Journal Article
Coherent ultrafast spin-dynamics probed in three dimensional topological insulators
Boschini, F., Mansurova, M., Mussler, G., Kampmeier, J., Grützmacher, D., Braun, L., Katmis, F., Moodera, J. S., Dallera, C., Carpene, E., Franz, C., Czerner, M., Heiliger, C., Kampfrath, T., Münzenberg, M.
Published in Scientific reports (29.10.2015)
Published in Scientific reports (29.10.2015)
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Journal Article
SiGe quantum dot crystals with periods down to 35 nm
Dais, C, Mussler, G, Fromherz, T, Müller, E, Solak, H H, Grützmacher, D
Published in Nanotechnology (26.06.2015)
Published in Nanotechnology (26.06.2015)
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Journal Article
Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6
Wirths, S., Buca, D., Tiedemann, A.T., Bernardy, P., Holländer, B., Stoica, T., Mussler, G., Breuer, U., Mantl, S.
Published in Solid-state electronics (01.05.2013)
Published in Solid-state electronics (01.05.2013)
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Journal Article
Conference Proceeding
n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility
Jovanović, V, Biasotto, C, Nanver, L K, Moers, J, Grützmacher, D, Gerharz, J, Mussler, G, van der Cingel, J, Zhang, J J, Bauer, G, Schmidt, O G, Miglio, L
Published in IEEE electron device letters (01.10.2010)
Published in IEEE electron device letters (01.10.2010)
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Journal Article
Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI
YU, W, ZHANG, B, MANTL, S, ZHAO, Q. T, BUCA, D, HARTMANN, J.-M, LUPTAK, R, MUSSLER, G, FOX, A, BOURDELLE, K. K, WANG, X
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
Die imprinting of MGs: A one-step approach for large-area metallic photonic crystals
Liu, Xue, Chen, Na, Gu, Jia-Lun, Yang, Guan-Nan, Mussler, G., Yao, Ke-Fu
Published in Materials & design (15.12.2015)
Published in Materials & design (15.12.2015)
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Journal Article
Photoluminescence studies of SiGe quantum dot arrays prepared by templated self-assembly
Dais, C, Mussler, G, Sigg, H, Fromherz, T, Auzelyte, V, Solak, H. H, Grützmacher, D
Published in Europhysics letters (01.12.2008)
Published in Europhysics letters (01.12.2008)
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Journal Article
Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction
Ruh, E., Mueller, E., Mussler, G., Sigg, H.C., Gruetzmacher, D.
Published in Ultramicroscopy (01.09.2010)
Published in Ultramicroscopy (01.09.2010)
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Journal Article
Continuous voltage tunability of intersubband relaxation times in coupled SiGe quantum well structures using ultrafast spectroscopy
Rauter, P, Fromherz, T, Vinh, N Q, Murdin, B N, Mussler, G, Grützmacher, D, Bauer, G
Published in Physical review letters (10.04.2009)
Published in Physical review letters (10.04.2009)
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Journal Article
Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET
Moers, J., Gerharz, J., Rinke, G., Mussler, G., Trellenkamp, St, Grützmacher, D.
Published in Thin solid films (26.02.2010)
Published in Thin solid films (26.02.2010)
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Journal Article
Conference Proceeding
Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction
Meduňa, M., Caha, O., Keplinger, M., Stangl, J., Bauer, G., Mussler, G., Grützmacher, D.
Published in Physica status solidi. A, Applications and materials science (01.08.2009)
Published in Physica status solidi. A, Applications and materials science (01.08.2009)
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Conference Proceeding
Integration of MOSFETs with SiGe dots as stressor material
Nanver, L.K., Jovanović, V., Biasotto, C., Moers, J., Grützmacher, D., Zhang, J.J., Hrauda, N., Stoffel, M., Pezzoli, F., Schmidt, O.G., Miglio, L., Kosina, H., Marzegalli, A., Vastola, G., Mussler, G., Stangl, J., Bauer, G., van der Cingel, J., Bonera, E.
Published in Solid-state electronics (01.06.2011)
Published in Solid-state electronics (01.06.2011)
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Conference Proceeding