PRESSURE-CONTACT TYPE SEMICONDUCTOR ELEMENT STACK
NAKAJIMA, Ryo, YOSHIZAWA, Daisuke, MUKUNOKI, Makoto, ICHIKURA, Yuta, OMOTE, Kenichiro
Year of Publication 03.11.2016
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Year of Publication 03.11.2016
Patent
High speed turn-on gate driving for 4.5kV IEGT without increase in PiN diode recovery current
Miki, Yamato, Mukunoki, Makoto, Matsuyoshi, Takashi, Tsukuda, Masanori, Omura, Ichiro
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2013)
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2013)
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Conference Proceeding
Low Reverse-Recovery Stress in High-Power Converters Achieved by Self-Resetting Saturable Cores
Gruening, H., Koyanagi, K., Mukunoki, M.
Published in IEEE transactions on industry applications (01.01.2009)
Published in IEEE transactions on industry applications (01.01.2009)
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Journal Article
Performance evaluation of a large capacity 3-level IEGT inverter
Al Mamun, Mostafa, Yoshizawa, Daisuke, Mukunoki, Makoto
Published in 2013 IEEE ECCE Asia Downunder (01.06.2013)
Published in 2013 IEEE ECCE Asia Downunder (01.06.2013)
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Conference Proceeding
Performance evaluation under the actual operating condition of a large capacity VSI inverter for steel mill applications
Mamun, Mostafa, Yoshizawa, Daisuke, Mukunoki, Makoto
Published in 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) (01.05.2014)
Published in 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) (01.05.2014)
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Conference Proceeding
PRESSURE-CONTACT TYPE SEMICONDUCTOR ELEMENT STACK
NAKAJIMA, Ryo, IIO, Naotaka, YOSHIZAWA, Daisuke, MUKUNOKI, Makoto, ICHIKURA, Yuta, OMOTE, Kenichiro
Year of Publication 04.08.2021
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Year of Publication 04.08.2021
Patent
A large capacity 3-level IEGT inverter
Yoshizawa, Daisuke, Mukunoki, Makoto, Omote, Kenichiro, Hayashi, Makoto, Isida, Takashi
Published in 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) (01.05.2014)
Published in 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) (01.05.2014)
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Conference Proceeding
Pressure contact type semiconductor device stack
Yoshizawa, Daisuke, Ichikura, Yuta, Mukunoki, Makoto, Iio, Naotaka, Omote, Kenichiro, Nakajima, Ryo
Year of Publication 07.05.2019
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Year of Publication 07.05.2019
Patent
PRESSURE-CONTACT TYPE SEMICONDUCTOR ELEMENT STACK
NAKAJIMA, Ryo, IIO, Naotaka, YOSHIZAWA, Daisuke, MUKUNOKI, Makoto, ICHIKURA, Yuta, OMOTE, Kenichiro
Year of Publication 02.01.2019
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Year of Publication 02.01.2019
Patent
Pressure-contact type semiconductor element stack
Yoshizawa, Daisuke, Ichikura, Yuta, Mukunoki, Makoto, Iio, Naotaka, Omote, Kenichiro, Nakajima, Ryo
Year of Publication 15.11.2018
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Year of Publication 15.11.2018
Patent
PRESSURE-CONTACT TYPE SEMICONDUCTOR ELEMENT STACK
NAKAJIMA, Ryo, IIO, Naotaka, YOSHIZAWA, Daisuke, MUKUNOKI, Makoto, ICHIKURA, Yuta, OMOTE, Kenichiro
Year of Publication 07.03.2018
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Year of Publication 07.03.2018
Patent
PRESSURE CONTACT TYPE SEMICONDUCTOR DEVICE STACK
YOSHIZAWA Daisuke, OMOTE Kenichiro, MUKUNOKI Makoto, NAKAJIMA Ryo, IIO Naotaka, ICHIKURA Yuta
Year of Publication 08.02.2018
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Year of Publication 08.02.2018
Patent
Pressure-contact type semiconductor element stack
Yoshizawa, Daisuke, Ichikura, Yuta, Mukunoki, Makoto, Iio, Naotaka, Omote, Kenichiro, Nakajima, Ryo
Year of Publication 16.11.2017
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Year of Publication 16.11.2017
Patent