Dislocation reduction in GaN crystal by advanced-DEEP
Motoki, Kensaku, Okahisa, Takuji, Hirota, Ryu, Nakahata, Seiji, Uematsu, Koji, Matsumoto, Naoki
Published in Journal of crystal growth (15.07.2007)
Published in Journal of crystal growth (15.07.2007)
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Journal Article
Conference Proceeding
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
Kensaku Motoki, Kensaku Motoki, Takuji Okahisa, Takuji Okahisa, Naoki Matsumoto, Naoki Matsumoto, Masato Matsushima, Masato Matsushima, Hiroya Kimura, Hiroya Kimura, Hitoshi Kasai, Hitoshi Kasai, Kikurou Takemoto, Kikurou Takemoto, Koji Uematsu, Koji Uematsu, Tetsuya Hirano, Tetsuya Hirano, Masahiro Nakayama, Masahiro Nakayama, Seiji Nakahata, Seiji Nakahata, Masaki Ueno, Masaki Ueno, Daijirou Hara, Daijirou Hara, Yoshinao Kumagai, Yoshinao Kumagai, Akinori Koukitu, Akinori Koukitu, Hisashi Seki, Hisashi Seki
Published in Japanese Journal of Applied Physics (01.01.2001)
Published in Japanese Journal of Applied Physics (01.01.2001)
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Journal Article
Growth and characterization of freestanding GaN substrates
Motoki, Kensaku, Okahisa, Takuji, Nakahata, Seiji, Matsumoto, Naoki, Kimura, Hiroya, Kasai, Hitoshi, Takemoto, Kikurou, Uematsu, Koji, Ueno, Masaki, Kumagai, Yoshinao, Koukitu, Akinori, Seki, Hisashi
Published in Journal of crystal growth (01.04.2002)
Published in Journal of crystal growth (01.04.2002)
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Journal Article