A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology
Maejima, Hiroshi, Kanda, Kazushige, Fujimura, Susumu, Takagiwa, Teruo, Ozawa, Susumu, Sato, Jumpei, Shindo, Yoshihiko, Sato, Manabu, Kanagawa, Naoaki, Musha, Junji, Inoue, Satoshi, Sakurai, Katsuaki, Morozumi, Naohito, Fukuda, Ryo, Shimizu, Yuui, Hashimoto, Toshifumi, Xu Li, Shimizu, Yuuki, Abe, Kenichi, Yasufuku, Tadashi, Minamoto, Takatoshi, Yoshihara, Hiroshi, Yamashita, Takahiro, Satou, Kazuhiko, Sugimoto, Takahiro, Kono, Fumihiro, Abe, Mitsuhiro, Hashiguchi, Tomoharu, Kojima, Masatsugu, Suematsu, Yasuhiro, Shimizu, Takahiro, Imamoto, Akihiro, Kobayashi, Naoki, Miakashi, Makoto, Yamaguchi, Kouichirou, Bushnaq, Sanad, Haibi, Hicham, Ogawa, Masatsugu, Ochi, Yusuke, Kubota, Kenro, Wakui, Taichi, Dong He, Weihan Wang, Minagawa, Hiroe, Nishiuchi, Tomoko, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Koh, Feng Lu, Ramachandra, Venky, Rajendra, Srinivas, Choi, Steve, Payak, Keyur, Raghunathan, Namas, Georgakis, Spiros, Sugawara, Hiroshi, Seungpil Lee, Futatsuyama, Takuya, Hosono, Koji, Shibata, Noboru, Hisada, Toshiki, Kaneko, Tetsuya, Nakamura, Hiroshi
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01.02.2018)
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01.02.2018)
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Conference Proceeding
Semiconductor memory
Maejima, Hiroshi, Fujimura, Susumu, Morozumi, Naohito, Isobe, Katsuaki, Shikata, Go
Year of Publication 15.02.2022
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Year of Publication 15.02.2022
Patent
SEMICONDUCTOR MEMORY
MOROZUMI, Naohito, FUJIMURA, Susumu, SHIKATA, Go, ISOBE, Katsuaki, MAEJIMA, Hiroshi
Year of Publication 28.01.2021
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Year of Publication 28.01.2021
Patent
Semiconductor memory
Maejima, Hiroshi, Fujimura, Susumu, Morozumi, Naohito, Isobe, Katsuaki, Shikata, Go
Year of Publication 17.11.2020
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Year of Publication 17.11.2020
Patent