Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices
Bordignon, Thomas, Duriez, Blandine, Guitard, Nicolas, Duru, Romain, Pribat, Clément, Richy, Jérôme, Reboh, Shay, Dhar, Siddhartha, Monsieur, Frédéric, Fache, Thibaud, Chalupa, Zdenek, Hartmann, Jean-Michel, Chevalier, Pascal, Roelens, Yannick, Danneville, François, Crémer, Sébastien
Published in Solid-state electronics (01.12.2023)
Published in Solid-state electronics (01.12.2023)
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Journal Article
Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Tantalum Pentoxide Metal-Insulator-Metal (MIM) Capacitors
Martinez, V., Besset, C., Monsieur, F., Montes, L., Ghibaudo, G.
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
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Conference Proceeding
Coupled Approach for Reliability Study of Fully Self Aligned SiGe: C 250GHz HBTs
Diop, M., Revil, N., Marin, M., Monsieur, F., Schwartzmann, T., Ghibaudo, G.
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
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Conference Proceeding
Characterization of Heated Ion Implantation for non Amorphizing Conditions and Correlation with Kinetic Monte Carlo Simulations
Joblot, Sylvain, Duru, Romain, Guitard, Nicolas, Lu, Vincent, Nassiet, Thomas, Beneyton, Remi, Cristiano, Fuccio, Dabertrand, Karen, Borrel, Julien, Juhel, Marc, Arevalo, Edwin, Monsieur, Frederic, Borowiak, Celine, Ghegin, Elodie, Clement, Laurent, Oudot, Evan, Rideau, Denis, Zou, Wei, Pinzelli, Luc
Published in 2018 22nd International Conference on Ion Implantation Technology (IIT) (01.09.2018)
Published in 2018 22nd International Conference on Ion Implantation Technology (IIT) (01.09.2018)
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Conference Proceeding
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications
Garba-Seybou, Tidjani, Federspiel, Xavier, Monsieur, Frederic, Sicre, Mathieu, Cacho, Florian, Hai, Joycelyn, Bravaix, Alain
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Experimental gm/ID Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, André, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article
Design Optimization of a THz Receiver Based on 60 nm Complementary Metal–Oxide–Semiconductor Technology
Palma, Fabrizio, Logoteta, Demetrio, Centurelli, Francesco, Chevalier, Pascal, Cicchetti, Renato, Monsieur, Frederic, Santini, Carlo, Testa, Orlandino, Trifiletti, Alessandro, d’Alessandro, Antonio
Published in Electronics (Basel) (01.08.2024)
Published in Electronics (Basel) (01.08.2024)
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Journal Article
Experimental /} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, Andre, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article
Enhanced RF Switch Performance in RFSOI Technology: Achieving 74 fs RON·COFF and 3.3 V RFVMAX on Thinned SOI
Bordignon, Thomas, Lucci, Luca, Fache, Thibaud, Pribat, Clement, Gregoire, Magali, Estellon, Adrien, Monsieur, Frederic, Guitard, Nicolas, Chalupa, Zdenek, Chevalier, Pascal, Duriez, Blandine, Roelens, Yannick, Danneville, Francois, Cremer, Sebastien
Published in 2024 IEEE European Solid-State Electronics Research Conference (ESSERC) (09.09.2024)
Published in 2024 IEEE European Solid-State Electronics Research Conference (ESSERC) (09.09.2024)
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Conference Proceeding
Silicon thickness monitoring strategy for FD-SOI 28nm technology
Cros, Antoine, Monsieur, Frederic, Carminati, Yann, Normandon, Philippe, Petit, David, Arnaud, Franck, Rosa, Julien
Published in Proceedings of the 2015 International Conference on Microelectronic Test Structures (01.03.2015)
Published in Proceedings of the 2015 International Conference on Microelectronic Test Structures (01.03.2015)
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Conference Proceeding
Journal Article
Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO2
Julliard, Pierre-Louis, Jay, Antoine, Gunde, Miha, Salles, Nicolas, Monsieur, Frederic, Guitard, Nicolas, Cabout, Thomas, Joblot, Sylvain, Martin-Samos, Layla, Rideau, Denis, Cristiano, Fuccio, Hemeryck, Anne
Published in 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2021)
Published in 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2021)
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Conference Proceeding
(Invited) Effect of SOI Substrate on CMOS Devices Reliability
Federspiel, Xavier, Arfaoui, Wafa, Angot, Damien, Monsieur, Frederic, Rafik, Mustapha, Mora, Pascal, Cacho, Florian, Roy, David, Huard, Vincent
Published in ECS transactions (26.03.2014)
Published in ECS transactions (26.03.2014)
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Journal Article
Copper Contact for 22 nm and Beyond: Device Performance and Reliability Evaluation
Soon-Cheon Seo, Chih-Chao Yang, Miaomiao Wang, Monsieur, Frederic, Adam, Lahir, Johnson, Jeffrey B, Horak, Dave, Fan, Susan, Kangguo Cheng, Stathis, James, Doris, Bruce
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article
Ageing under illumination of MOS transistors for active pixel sensors (APS) applications
Lopez, Diana, Monsieur, Frederic, Balestra, Francis
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
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Conference Proceeding
MOS TRANSISTOR ON SOI STRUCTURE
HAENDLER, Sebastien, MONSIEUR, Frederic, CREMER, Sebastien, FLEURY, Alain
Year of Publication 14.09.2023
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Year of Publication 14.09.2023
Patent
TCAD study of back-gate biasing in UTBB
Hook, T. B., Furkay, S., Kulkarni, P., Monsieur, F.
Published in IEEE 2011 International SOI Conference (01.10.2011)
Published in IEEE 2011 International SOI Conference (01.10.2011)
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Conference Proceeding
Analysis of recoverable and non-recoverable NBTI and PBTI using AC and DC stresses
Monsieur, F, Cartier, E, Stathis, J
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding