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"MOLL HANS PETER"
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"MOLL HANS PETER"
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Method for masking a recess in a structure with a large aspect ratio
by
EFFERENN DIRK
,
MOLL HANS
-
PETER
Year of Publication
13.10.2005
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METHOD FOR MASKING A RECESS IN A STRUCTURE WITH A LARGE ASPECT RATIO
by
MOLL
,
HANS
-
PETER
,
EFFERENN, DIRK
Year of Publication
13.10.2004
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Production of a trench capacitor used in integrated circuits comprises forming a trench in a substrate using a hard mask, forming a capacitor dielectric in the lower and middle trench region, and further processing
by
MOLL
,
HANS
-
PETER
,
ZIMMERMANN, ULRICH
Year of Publication
30.09.2004
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Method for fabricating a semiconductor structure
by
EFFERENN DIRK
,
MOLL HANS
-
PETER
Year of Publication
12.08.2004
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Method for fabricating a semiconductor structure
by
Efferenn, Dirk
,
Moll
,
Hans
-
Peter
Year of Publication
12.08.2004
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Production of a hard mask on a semiconductor substrate used in the production of integrated circuits comprises forming a hard mask layer on the substrate, forming a photolacquer structure on the hard mask layer, and further processing
by
MOLL
,
HANS
-
PETER
,
EFFERENN, DIRK
Year of Publication
05.08.2004
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Method of manufacturing semiconductor e.g. memory involves reducing overlap region between strip sections formed on semiconductor substrate, and filling trench structure dividing strip sections, with material containing silicon oxide
by
MOLL
,
HANS
-
PETER
,
EFFERENN, DIRK
Year of Publication
15.07.2004
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METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
by
EFFERENN DIRK
,
MOLL HANS
-
PETER
Year of Publication
24.06.2004
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Method for filling depressions on a semiconductor wafer
by
EFFERENN DIRK
,
MOLL HANS
-
PETER
Year of Publication
06.04.2004
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Method for filling depressions on a semiconductor wafer
by
Efferenn, Dirk
,
Moll
,
Hans
-
Peter
Year of Publication
06.04.2004
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Single-Sided Trench Contact Window
by
KAR GOURI SANKAR
,
PARK INHO
,
HEINECK LARS
,
MOLL HANS
-
PETER
Year of Publication
15.04.2010
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Herstellungsverfahren für eine Grabenanordnung mit Gräben unterschiedlicher Tiefe in einem Halbleitersubstrat
by
MOLL
,
HANS
-
PETER
,
MANGER, DIRK
,
SCHLOESSER, TILL
Year of Publication
06.06.2007
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Method for filling depressions on a semiconductor wafer
by
EFFERENN DIRK
,
MOLL HANS
-
PETER
Year of Publication
04.09.2003
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Method for filling depressions on a semiconductor wafer
by
Efferenn, Dirk
,
Moll
,
Hans
-
Peter
Year of Publication
04.09.2003
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Process for masking first recesses of a structure comprises applying a filler layer on a structure so that a hollow space is formed in the first recesses, and removing the filler layer up to the region of the hollow space by etching
by
MOLL
,
HANS
-
PETER
,
EFFERENN, DIRK
Year of Publication
26.06.2003
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Verfahren zur Ausbildung von Isolationsgräben zwischen aktiven Gebieten bei der Herstellung einer integrierten Halbleiterschaltung
by
MOLL
,
HANS
-
PETER
,
EFFERENN, DIRK
Year of Publication
18.06.2003
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Production of isolation trenches between active regions during manufacture of integrated circuits, especially DRAMs, comprises etching trenches filled with oxide in semiconductor substrate to isolate the active regions and processing
by
MOLL
,
HANS
-
PETER
,
EFFERENN, DIRK
Year of Publication
06.03.2003
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Production of self-adjusting mask comprises covering structures with covering layer, applying further covering layer, removing further covering layer until first covering layer is exposed in first partial surface, removing covering layer
by
MOLL
,
HANS
-
PETER
,
EFFERENN, DIRK
Year of Publication
14.11.2002
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Forming complex structure for manufacturing of integrated circuits e.g. DRAM, by forming orthogonal patterns in separate steps
by
MOLL
,
HANS
-
PETER
,
EFFERENN, DIRK
Year of Publication
31.10.2002
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Verfahren zur Ausbildung von Isolationsgräben zwischen aktiven Gebieten bei der Herstellung integrierter Schaltungen
by
MOLL
,
HANS
-
PETER
,
EFFERENN, DIRK
,
GRUENING, ULRIKE
Year of Publication
15.09.2005
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