High quality AlGaN grown on ELO AlN/sapphire templates
Zeimer, U., Kueller, V., Knauer, A., Mogilatenko, A., Weyers, M., Kneissl, M.
Published in Journal of crystal growth (15.08.2013)
Published in Journal of crystal growth (15.08.2013)
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Journal Article
Stabilization of sputtered AlN/sapphire templates during high temperature annealing
Hagedorn, S., Walde, S., Mogilatenko, A., Weyers, M., Cancellara, L., Albrecht, M., Jaeger, D.
Published in Journal of crystal growth (15.04.2019)
Published in Journal of crystal growth (15.04.2019)
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Journal Article
High-quality AlN grown on a thermally decomposed sapphire surface
Hagedorn, S., Knauer, A., Brunner, F., Mogilatenko, A., Zeimer, U., Weyers, M.
Published in Journal of crystal growth (01.12.2017)
Published in Journal of crystal growth (01.12.2017)
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Journal Article
Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures
Cho, H K, Mogilatenko, A, Susilo, N, Ostermay, I, Seifert, S, Wernicke, T, Kneissl, M, Einfeldt, S
Published in Semiconductor science and technology (01.10.2022)
Published in Semiconductor science and technology (01.10.2022)
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Journal Article
Nanometrology: Absolute Seebeck coefficient of individual silver nanowires
Kockert, M., Kojda, D., Mitdank, R., Mogilatenko, A., Wang, Z., Ruhhammer, J., Kroener, M., Woias, P., Fischer, S. F.
Published in Scientific reports (30.12.2019)
Published in Scientific reports (30.12.2019)
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Journal Article
Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates
Cho, E., Mogilatenko, A., Brunner, F., Richter, E., Weyers, M.
Published in Journal of crystal growth (15.05.2013)
Published in Journal of crystal growth (15.05.2013)
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Journal Article
High-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness
Elattar, M, Brox, O, Della Casa, P, Mogilatenko, A, Maaßdorf, A, Martin, D, Wenzel, H, Knigge, A, Weyers, M, Crump, P
Published in Physica scripta (01.01.2023)
Published in Physica scripta (01.01.2023)
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Journal Article
V-pit to truncated pyramid transition in AlGaN-based heterostructures
Mogilatenko, A, Enslin, J, Knauer, A, Mehnke, F, Bellmann, K, Wernicke, T, Weyers, M, Kneissl, M
Published in Semiconductor science and technology (15.10.2015)
Published in Semiconductor science and technology (15.10.2015)
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Journal Article
AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy
Walde, S., Hagedorn, S., Coulon, P.-M., Mogilatenko, A., Netzel, C., Weinrich, J., Susilo, N., Ziffer, E., Matiwe, L., Hartmann, C., Kusch, G., Alasmari, A., Naresh-Kumar, G., Trager-Cowan, C., Wernicke, T., Straubinger, T., Bickermann, M., Martin, R.W., Shields, P.A., Kneissl, M., Weyers, M.
Published in Journal of crystal growth (01.02.2020)
Published in Journal of crystal growth (01.02.2020)
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Journal Article
Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces
Mogilatenko, A, Knauer, A, Zeimer, U, Weyers, M
Published in Semiconductor science and technology (14.12.2015)
Published in Semiconductor science and technology (14.12.2015)
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Journal Article
Effect of the AIN nucleation layer growth on AlN material quality
Reentilä, O., Brunner, F., Knauer, A., Mogilatenko, A., Neumann, W., Protzmann, H., Heuken, M., Kneissl, M., Weyers, M., Tränkle, G.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN
Mogilatenko, A., Knauer, A., Zeimer, U., Netzel, C., Jeschke, J., Unger, R.-S., Hartmann, C., Wollweber, J., Dittmar, A., Juda, U., Weyers, M., Bickermann, M.
Published in Journal of crystal growth (01.01.2019)
Published in Journal of crystal growth (01.01.2019)
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Journal Article
Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth
Mogilatenko, A., Knauer, A., Zeimer, U., Hartmann, C., Oppermann, H., Weyers, M.
Published in Journal of crystal growth (15.03.2017)
Published in Journal of crystal growth (15.03.2017)
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Journal Article
Stress evolution during AlxGa1−xN/AlN growth on sapphire
Brunner, F., Mogilatenko, A., Kueller, V., Knauer, A., Weyers, M.
Published in Journal of crystal growth (01.08.2013)
Published in Journal of crystal growth (01.08.2013)
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Journal Article
Analysis of crystal orientation in AlN layers grown on m-plane sapphire
Mogilatenko, A., Kirmse, H., Stellmach, J., Frentrup, M., Mehnke, F., Wernicke, T., Kneissl, M., Weyers, M.
Published in Journal of crystal growth (15.08.2014)
Published in Journal of crystal growth (15.08.2014)
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Journal Article
Distributed feedback lasers in the 760 to 810 nm range and epitaxial grating design
Brox, O, Bugge, F, Mogilatenko, A, Luvsandamdin, E, Wicht, A, Wenzel, H, Erbert, G
Published in Semiconductor science and technology (01.09.2014)
Published in Semiconductor science and technology (01.09.2014)
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Journal Article
The effect of a distinct diameter variation on the thermoelectric properties of individual Bi0.39Te0.61 nanowires
Kojda, D, Mitdank, R, Mogilatenko, A, Töllner, W, Wang, Z, Kröner, M, Woias, P, Nielsch, K, Fischer, S F
Published in Semiconductor science and technology (01.12.2014)
Published in Semiconductor science and technology (01.12.2014)
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Journal Article
Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistors
Brahem, M., Mogilatenko, A., Stoppel, D., Berger, D., Hochheim, S., Rentner, D., Ostermay, I., Reiner, M., Boppel, S., Nosaeva, K., Weimann, N.
Published in Microelectronic engineering (15.07.2019)
Published in Microelectronic engineering (15.07.2019)
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