Reduced variability of drain-induced barrier lowering and subthreshold slope at high temperature in bulk and silicon-on-thin-buried-oxide (SOTB) MOSFETs
Gao, Shuang, Mizutani, Tomoko, Takeuchi, Kiyoshi, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
Lowering data retention voltage in static random access memory array by post fabrication self-improvement of cell stability by multiple stress application
Mizutani, Tomoko, Takeuchi, Kiyoshi, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage
Hao Qiu, Takeuchi, Kiyoshi, Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in IEEE transactions on electron devices (01.11.2016)
Published in IEEE transactions on electron devices (01.11.2016)
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Journal Article
Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature
Sekiguchi, Shohei, Ahn, Min-Ju, Mizutani, Tomoko, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
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Journal Article
Detailed analysis of minimum operation voltage of extraordinarily unstable cells in fully depleted silicon-on-buried-oxide six-transistor static random access memory
Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors
Kumar, Anil, Mizutani, Tomoko, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
Mao, Ke, Mizutani, Tomoko, Kumar, Anil, Saraya, Takuya, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells
Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Shinohara, Hirofumi, Iwamatsu, Toshiaki, Oda, Hidekazu, Sugii, Nobuyuki, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Journal Article
Measurement of SRAM power-up state for PUF applications using an addressable SRAM cell array test structure
Takeuchi, Kiyoshi, Mizutani, Tomoko, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro, Shinohara, Hirofumi
Published in 2016 International Conference on Microelectronic Test Structures (ICMTS) (01.03.2016)
Published in 2016 International Conference on Microelectronic Test Structures (ICMTS) (01.03.2016)
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Conference Proceeding
Journal Article
Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal--Oxide--Semiconductor Field Effect Transistors
Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Iwamatsu, Toshiaki, Oda, Hidekazu, Sugii, Nobuyuki, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors
Kumar, Anil, Mizutani, Tomoko, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
A new write stability metric using extended write butterfly curve for yield estimation in SRAM cells at low supply voltage
Hao Qiu, Takeuchi, Kiyoshi, Mizutani, Tomoko, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in 2016 International Conference on Microelectronic Test Structures (ICMTS) (01.03.2016)
Published in 2016 International Conference on Microelectronic Test Structures (ICMTS) (01.03.2016)
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Conference Proceeding
Journal Article
High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method
Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors
Mao, Ke, Mizutani, Tomoko, Kumar, Anil, Saraya, Takuya, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Published in Applied physics express (01.11.2010)
Published in Applied physics express (01.11.2010)
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Journal Article