Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
Toko, Kaoru, Nakao, Isakane, Sadoh, Taizoh, Noguchi, Takashi, Miyao, Masanobu
Published in Solid-state electronics (01.11.2009)
Published in Solid-state electronics (01.11.2009)
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Journal Article
Room-temperature generation of giant pure spin currents using epitaxial Co2FeSi spin injectors
Kimura, Takashi, Hashimoto, Naoki, Yamada, Shinya, Miyao, Masanobu, Hamaya, Kohei
Published in NPG Asia materials (01.03.2012)
Published in NPG Asia materials (01.03.2012)
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Journal Article
Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide
Yamada, Shinya, Tanikawa, Kohei, Miyao, Masanobu, Hamaya, Kohei
Published in Crystal growth & design (03.10.2012)
Published in Crystal growth & design (03.10.2012)
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Journal Article
Giant Ge-on-Insulator Formation by Si–Ge Mixing-Triggered Liquid-Phase Epitaxy
Miyao, Masanobu, Tanaka, Takanori, Toko, Kaoru, Tanaka, Masanori
Published in Applied physics express (01.04.2009)
Published in Applied physics express (01.04.2009)
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Journal Article
High-quality Co2FeSi0.5Al0.5/Si heterostructures for spin injection in silicon spintronic devices
Tanikawa, Kohei, Oki, Soichiro, Yamada, Shinya, Kawano, Makoto, Miyao, Masanobu, Hamaya, Kohei
Published in Thin solid films (30.04.2014)
Published in Thin solid films (30.04.2014)
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Journal Article
Conference Proceeding
High Sn-concentration (~8%) GeSn by low-temperature (~150°C) solid-phase epitaxy of a-GeSn/c-Ge
Sadoh, Taizoh, Ooato, Akira, Park, Jong-Hyeok, Miyao, Masanobu
Published in Thin solid films (01.03.2016)
Published in Thin solid films (01.03.2016)
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Journal Article
Enhanced Interfacial-Nucleation in Al-Induced Crystallization for (111) Oriented Si1-xGex (0 ≤ x ≤ 1) Films on Insulating Substrates
Kurosawa, Masashi, Kawabata, Naoyuki, Sadoh, Taizoh, Miyao, Masanobu
Published in ECS journal of solid state science and technology (01.01.2012)
Published in ECS journal of solid state science and technology (01.01.2012)
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Journal Article
Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics
Sadoh, Taizoh, Park, Jong-Hyeok, Aoki, Rikuta, Miyao, Masanobu
Published in Japanese Journal of Applied Physics (01.03.2016)
Published in Japanese Journal of Applied Physics (01.03.2016)
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Journal Article
Large anisotropy of Gilbert damping constant in L21-ordered Co2FeSi film
Kasatani, Yuichi, Yamada, Shinya, Itoh, Hiroyoshi, Miyao, Masanobu, Hamaya, Kohei, Nozaki, Yukio
Published in Applied physics express (17.11.2014)
Published in Applied physics express (17.11.2014)
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Journal Article
Influence of Al co-deposition on the crystal growth of Co-based Heusler-compound thin films on Si(111)
Oki, Soichiro, Yamada, Shinya, Murakami, Tatsuhiko, Miyao, Masanobu, Hamaya, Kohei
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Journal Article
Conference Proceeding
Dynamic analysis of rapid-melting growth using SiGe on insulator
Matsumura, Ryo, Tojo, Yuki, Kurosawa, Masashi, Sadoh, Taizoh, Miyao, Masanobu
Published in Thin solid films (30.04.2014)
Published in Thin solid films (30.04.2014)
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Journal Article
Conference Proceeding
Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe3Si/n+-Ge Schottky-tunnel contacts
Hamaya, Kohei, Takemoto, Gotaro, Baba, Yuzo, Kasahara, Kenji, Yamada, Shinya, Sawano, Kentarou, Miyao, Masanobu
Published in Thin solid films (30.04.2014)
Published in Thin solid films (30.04.2014)
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Journal Article
Conference Proceeding
Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration ( ∼ 10%) GeSn on insulator enhanced by weak laser irradiation
Moto, Kenta, Sugino, Takayuki, Matsumura, Ryo, Ikenoue, Hiroshi, Miyao, Masanobu, Sadoh, Taizoh
Published in AIP advances (01.07.2017)
Published in AIP advances (01.07.2017)
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