High surge current ruggedness of 5kV class 4H-SiC SiCGT
Ogata, S, Asano, K, Sugawara, Y, Tanaka, A, Miyanagi, Y, Nakayama, K, Izumi, T, Hayashi, T, Nishimura, M
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
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Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
Conference Proceeding
4.5 kV 120A SICGT and Its PWM Three Phase Inverter Operation of 100kVA class
Sugawara, Y., Miyanagi, Y., Asano, K., Agarwal, A., Ryu, S., Palmour, J., Shoji, Y., Okada, S., Ogata, S., Izumi, T.
Published in 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (2006)
Published in 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (2006)
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Conference Proceeding
High surge forward current ruggedness of 5kV class 4H-SiC pn diode
Ogata, S, Asano, K, Sugawara, Y, Tanaka, A, Miyanagi, Y, Nakayama, K, Izumi, T, Hayashi, T, Nishimura, M
Published in The 2010 International Power Electronics Conference - ECCE ASIA (01.06.2010)
Published in The 2010 International Power Electronics Conference - ECCE ASIA (01.06.2010)
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Conference Proceeding
Reliability investigation of SiC bipolar device module in long time inverter operation
Tanaka, A., Ogata, S., Izumi, T., Nakayama, K., Hayashi, T., Miyanagi, Y., Asano, K.
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
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Conference Proceeding
5kV class 4H-SiC PiN diode with low voltage overshoot during forward recovery for high frequency inverter
Ogata, S., Miyanagi, Y., Nakayama, K., Tanaka, A., Asano, K.
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
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Conference Proceeding
Development of a 100 kVA SiC inverter with high overload capability of 300 kVA
Sugawara, Y., Ogata, S., Izumi, T., Nakayama, K., Miyanagi, Y., Asano, K., Tanaka, A., Okada, S., Ishi, R.
Published in 2009 21st International Symposium on Power Semiconductor Devices & IC's (01.06.2009)
Published in 2009 21st International Symposium on Power Semiconductor Devices & IC's (01.06.2009)
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Conference Proceeding
4.5 kV 1000 A Class SiC pn Diode Modules with Resin Mold Package and Ceramic Flat Package
Sugawara, Y., Ogata, S., Okada, S., Izumi, T., Miyanagi, Y., Asano, K., Nakayama, K., Tanaka, A.
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
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Conference Proceeding
180kVA Three Phase SiCGT Inverter Utilizing Novel VF Degradation Reduction Phenomena for SiC Devices
Sugawara, Y., Miyanagi, Y., Nakayama, K., Asano, K., Ogata, S., Okada, S., Izumi, T., Tanaka, A.
Published in Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's (01.05.2007)
Published in Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's (01.05.2007)
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Conference Proceeding
New Measurement Method of Tj of SiCGT and Its Application to a High Voltage Inverter Operating at greater than 300°C
Asano, K., Sugawara, Y., Tanaka, A., Miyanagi, Y., Okada, S., Ogata, S., Izumi, T., Nakayama, K.
Published in Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's (01.05.2007)
Published in Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's (01.05.2007)
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Conference Proceeding
4.5 kV 60A SICGT and its Half Bridge Inverter Operation of 20kVA Class
Sugawara, Y., Asano, K., Ogata, S., Agarwal, A., Ryu, S., Palmour, J., Okada, S., Miyanagi, Y.
Published in Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005 (2005)
Published in Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005 (2005)
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Conference Proceeding
Heavily Electron-irradiated High Resistive 4H-SiC pin diode for Turn-on Snubber of 200kVA Class High Power SiCGT Inverter
Asano, K., Sugawara, Y., Tanaka, A., Miyanagi, Y., Nakayama, K., Ogata, S., Okada, S., Izumi, T., Ishii, R.
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
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Conference Proceeding
Nitrogen-doped ZnSe and ZnSSe grown by molecular beam epiatxy
MATSUMURA, N, TSUBOKURA, M, NAKAMURA, N, MIYAGAWA, K, MIYANAGI, Y, SARAIE, J
Published in Japanese journal of applied physics (1990)
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Published in Japanese journal of applied physics (1990)
Journal Article
Molecular beam epitaxial growth of ZnSSe with Hg-Xe lamp irradiation
MATSUMURA, N, TSUBOKURA, M, MIYAGAWA, K, NAKAMURA, N, MIYANAGI, Y, FUKADA, T, SARAIE, J
Published in Japanese Journal of Applied Physics (01.05.1990)
Published in Japanese Journal of Applied Physics (01.05.1990)
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Journal Article
Nitrogen-Doped ZnSe and ZnSSe Grown by Molecular Beam Epitaxy
Matsumura, Nobuo, Tsubokura, Mitsutaka, Nakamura, Nobuhiro, Miyagawa, Kazuhiro, Miyanagi, Yoichi, Saraie, Junji
Published in Japanese Journal of Applied Physics (01.02.1990)
Published in Japanese Journal of Applied Physics (01.02.1990)
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Journal Article