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Watanabe, Takeshi, Ishikawa, Ryohei, Hara, Natsumi, Iwasaki, Takamitsu, Miyachi, Mamoru, Shiigi, Yusei, Takahashi, Mayu, Kuroki, Daichi, Koh, Shinji
Published in Electrochemistry communications (01.05.2022)
Published in Electrochemistry communications (01.05.2022)
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AlGaInN/AlGaInP Two-Wavelength Laser Diodes Fabricated by Wafer-Level Transferring Technique
Miyachi, Mamoru, Kimura, Yoshinori, Chikuma, Kiyofumi
Published in Japanese Journal of Applied Physics (01.02.2004)
Published in Japanese Journal of Applied Physics (01.02.2004)
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Optical Gain and Optical Internal Loss of GaN-Based Laser Diodes Measured by Variable Stripe Length Method with Laser Processing
Kimura, Yoshinori, Ito, Atsuya, Miyachi, Mamoru, Takahashi, Hirokazu, Watanabe, Atsushi, Ota, Hiroyuki, Ito, Norikazu, Tanabe, Tetsuhiro, Sonobe, Masayuki, Chikuma, Kiyofumi
Published in Japanese Journal of Applied Physics (15.10.2001)
Published in Japanese Journal of Applied Physics (15.10.2001)
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Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Kimura, Yoshinori, Miyachi, Mamoru, Takahashi, Hirokazu, Tanaka, Toshiyuki, Nishitsuka, Mitsuru, Watanabe, Atsushi, Ota, Hiroyuki, Chikuma, Kiyofumi
Published in Japanese Journal of Applied Physics (15.10.1998)
Published in Japanese Journal of Applied Physics (15.10.1998)
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