EP02.12: A new strategy for evaluation of fetal breathing movements
Nagayasu, Y., Mitsuhashi, R., Murakami, H., Daimon, A., Nunode, M., Maruoka, H., Sano, T., Fujita, D., Ohmichi, M.
Published in Ultrasound in obstetrics & gynecology (01.10.2023)
Published in Ultrasound in obstetrics & gynecology (01.10.2023)
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Journal Article
EP33.05: Visualisation of assessments of explainable AI: determination of difference between the upper arm and thigh in fetal ultrasound using Grad‐CAM
Nagayasu, Y., Yamada, S., Mitsuhashi, R., Nunode, M., Sawada, M., Sugimoto, A., Sano, T., Fujita, D., Ohmichi, M.
Published in Ultrasound in obstetrics & gynecology (01.09.2022)
Published in Ultrasound in obstetrics & gynecology (01.09.2022)
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Journal Article
ANION–CATION VERSUS WEAK INTERMOLECULAR INTERACTIONS IN THE STRUCTURES OF Et4N+, Pr4N+, AND Bu4N+ CATION SALTS WITH THE [W(CN)6(bpy)]2– ANION
Hodorowicz, M., Szklarzewicz, J., Jurowska, A., Mikuriya, M., Mitsuhashi, R., Yoshioka, D.
Published in Journal of structural chemistry (2021)
Published in Journal of structural chemistry (2021)
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Journal Article
Association between the menstrual cycle and fitness tests in female collegiate soccer players
Mitsuhashi, R, Sawai, A, Warashina, Y, Mizushima, R, Mesaki, N, Nakata, Y, Shiraki, H
Published in Japanese Journal of Clinical Sports Medicine (31.01.2023)
Published in Japanese Journal of Clinical Sports Medicine (31.01.2023)
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Journal Article
Magnetic Material Based on Mixed-Valent Dinuclear Pivalate and Cyanidometalate
Mikuriya, M., Yoshioka, D., Mitsuhashi, R., Luneau, D., Matoga, D., Szklarzewicz, J., Handa, M.
Published in Acta physica Polonica, A (01.01.2017)
Published in Acta physica Polonica, A (01.01.2017)
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Journal Article
Nitrogen profile engineering in the interfacial SiON in a HfAlO/SiON gate dielectric by NO Re-oxidation
Torii, K., Mitsuhashi, R., Ohji, H., Kawahara, T., Kitajima, H.
Published in IEEE transactions on electron devices (01.02.2006)
Published in IEEE transactions on electron devices (01.02.2006)
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Journal Article
Work-Function Engineering for 32-nm-Node pMOS Devices: High-Performance TaCNO-Gated Films
O'Sullivan, B.J., Mitsuhashi, R., Ito, S., Oikawa, K., Kubicek, S., Paraschiv, V., Adelmann, C., Veloso, A., HongYu Yu, Schram, T., Biesemans, S., Nakabayashi, T., Ikeda, A., Niwa, M.
Published in IEEE electron device letters (01.11.2008)
Published in IEEE electron device letters (01.11.2008)
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Journal Article
Comparison of thermal and plasma oxidations for HfO2/Si interface
HAYASHI, S, YAMAMOTO, K, HARADA, Y, MITSUHASHI, R, ERIGUCHI, K, KUBOTA, M, NIWA, M
Published in Applied surface science (30.06.2003)
Published in Applied surface science (30.06.2003)
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Conference Proceeding
Journal Article
Demonstration of metal-gated low Vt n-MOSFETs using a poly -Si /TaN/Dy2O3/SiON gate stack with a scaled EOT value
YU, H. Y, SINGANAMALLA, R, YIN, K. M, SCHRAM, T, KUBICEK, S, DE GENDT, S, ABSIL, P, DE MEYER, K, BIESEMANS, S, RAGNARSSON, L.-A, CHANG, V. S, CHO, H.-J, MITSUHASHI, R, ADELMANN, C, VAN ELSHOCHT, S, LEHNEN, P, CHANG, S. Z
Published in IEEE electron device letters (01.07.2007)
Published in IEEE electron device letters (01.07.2007)
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Journal Article
Results of Vibrational and Thermal Test for MOLI Laser Transmitter
Sakaizawa, D., Mitsuhashi, R., Murooka, J., Imai, T., Kimura, T.
Published in IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium (01.07.2019)
Published in IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium (01.07.2019)
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Conference Proceeding
Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Veloso, A., Yu, H.Y., Lauwers, A., Chang, S.Z., Adelmann, C., Onsia, B., Demand, M., Brus, S., Vrancken, C., Singanamalla, R., Lehnen, P., Kittl, J., Kauerauf, T., Vos, R., O′Sullivan, B.J., Van Elshocht, S., Mitsuhashi, R., Whittemore, G., Yin, K.M., Niwa, M., Hoffmann, T., Absil, P., Jurczak, M., Biesemans, S.
Published in Solid-state electronics (01.09.2008)
Published in Solid-state electronics (01.09.2008)
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Journal Article
Conference Proceeding
Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors
ROTHSCHILD, A, MITSUHASHI, R, VELOSO, A, LAUWERS, A, DE POTTER, M, DEBUSSCHERE, I, JURCZAK, M, NIWA, M, ABSIL, P, BIESEMANS, S, KERNER, C, SHI, X, EVERAERT, J. L, DATE, L, CONARD, T, RICHARD, O, VRANCKEN, C, VERBEECK, R
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Conference Proceeding
PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application
Yamamoto, K., Kubicek, S., Rothschild, A., Mitsuhashi, R., Deweerd, W., Veloso, A., Jurczak, M., Biesemans, S., De Gendt, S., Wickramanayaka, S., Hayashi, S., Niwa, M.
Published in Microelectronic engineering (01.06.2005)
Published in Microelectronic engineering (01.06.2005)
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Journal Article
Conference Proceeding
45nm LSTP FET with FUSI Gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
Mitsuhashi, R., Yamamoto, K., Hayashi, S., Rothschild, A., Kubicek, S., Veloso, A., Van Elshocht, S., Jurczak, M., De Gendt, S., Biesemans, S., Niwa, M.
Published in Microelectronic engineering (01.06.2005)
Published in Microelectronic engineering (01.06.2005)
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Journal Article
Conference Proceeding
Auger electron spectroscopy and ion scattering spectroscopy studies of altered layer formation in AlN thin film prepared by post-irradiation with N2+ ions
Mizuhara, Y., Mitsuhashi, R., Nagatomi, T., Takai, Y., Inoue, M.
Published in Surface and interface analysis (01.05.2002)
Published in Surface and interface analysis (01.05.2002)
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Journal Article