Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors
Gotow, Takahiro, Mitsuhara, Manabu, Hoshi, Takuya, Sugiyama, Hiroki, Takenaka, Mitsuru, Takagi, Shinichi
Published in Journal of applied physics (07.11.2017)
Published in Journal of applied physics (07.11.2017)
Get full text
Journal Article
Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile
Gotow, Takahiro, Mitsuhara, Manabu, Hoshi, Takuya, Sugiyama, Hiroki, Takenaka, Mitsuru, Takagi, Shinichi
Published in Journal of applied physics (07.12.2019)
Published in Journal of applied physics (07.12.2019)
Get full text
Journal Article
Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers
Gotow, Takahiro, Mitsuhara, Manabu, Hoshi, Takuya, Sugiyama, Hiroki, Takenaka, Mitsuru, Takagi, Shinichi
Published in Journal of applied physics (07.06.2019)
Published in Journal of applied physics (07.06.2019)
Get full text
Journal Article
Ultrahigh-$Q$ Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
Onomitsu, Koji, Mitsuhara, Manabu, Yamamoto, Hideki, Yamaguchi, Hiroshi
Published in Applied physics express (01.11.2013)
Published in Applied physics express (01.11.2013)
Get full text
Journal Article
Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy
Sato, Tomonari, Mitsuhara, Manabu, Iga, Ryuzo, Kanazawa, Shigeru, Inoue, Yasuyuki
Published in Journal of crystal growth (15.01.2011)
Published in Journal of crystal growth (15.01.2011)
Get full text
Journal Article
Conference Proceeding
Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony
Mitsuhara, Manabu, Sato, Tomonari, Yamamoto, Norio, Fukano, Hideki, Kondo, Yasuhiro
Published in Journal of crystal growth (01.07.2009)
Published in Journal of crystal growth (01.07.2009)
Get full text
Journal Article
InP/InGaAs Heterojunction Phototransistor Operating at Wavelengths above 2 µm Realized Using Strained InAs/InGaAs Multiquantum Well Absorption Layer
Fukano, Hideki, Sato, Tomonari, Mitsuhara, Manabu, Kondo, Yasuhiro, Yasaka, Hiroshi
Published in Japanese Journal of Applied Physics (01.10.2008)
Published in Japanese Journal of Applied Physics (01.10.2008)
Get full text
Journal Article