Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits
Mitlehner, Heinz, Erlbacher, Tobias, Weisse, Julietta, Frey, Lothar
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements
Weisse, Julietta, Sledziewski, Tomasz, Krieger, Michael, Bauer, Anton J., Mitlehner, Heinz, Frey, Lothar, Erlbacher, Tobias, Hauck, Martin
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
Weisse, Julietta, Sledziewski, Tomasz, Frey, Lothar, Tschiesche, Mattias, Krieger, Michael, Mitlehner, Heinz, Erlbacher, Tobias, Hauck, Martin, Bauer, Anton J.
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)
Mitlehner, Heinz, Erlbacher, Tobias, Bauer, Anton J., Hürner, Andreas, Frey, Lothar
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability
Hürner, Andreas, Bauer, Anton J., Erlbacher, Tobias, Mitlehner, Heinz, Frey, Lothar
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC
di Benedetto, Luigi, Hürner, Andreas, Bauer, Anton J., Erlbacher, Tobias, Mitlehner, Heinz, Frey, Lothar
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
INVERTER INVERTER
ZIERHUT HERMANN ZIERHUT HERMANN, MITLEHNER HEINZ MITLEHNER HEINZ, MAIER REINHARD MAIER REINHARD
Year of Publication 15.05.1996
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Year of Publication 15.05.1996
Patent
An 1800 V triple implanted vertical 6H-SiC MOSFET
Peters, D., Schorner, R., Friedrichs, P., Volkl, J., Mitlehner, H., Stephani, D.
Published in IEEE transactions on electron devices (01.03.1999)
Published in IEEE transactions on electron devices (01.03.1999)
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Journal Article
Impact of Al-Ion Implantation on the Formation of Deep Defects in n-Type 4H-SiC
Weise, Julietta, Csato, Constantin, Hauck, Martin, Erlekampf, Jurgen, Akhmadaliev, Shavkat, Rommel, Mathias, Mitlehner, Heinz, Rub, Michael, Krieger, Michael, Bauer, Anton, Haublein, Volker, Erlbacher, Tobias, Frey, Lothar
Published in 2018 22nd International Conference on Ion Implantation Technology (IIT) (01.09.2018)
Published in 2018 22nd International Conference on Ion Implantation Technology (IIT) (01.09.2018)
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Conference Proceeding