Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm super(2/V s at 300 K for ion-implanted diamond)
Ratnikova, A K, Dukhnovsky, M P, Fedorov, YuYu, Zemlyakov, V E, Muchnikov, AB, Vikharev, AL, Gorbachev, AM, Radishev, D B, Altukhov, A A, Mitenkin, A V
Published in Diamond and related materials (01.08.2011)
Published in Diamond and related materials (01.08.2011)
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Journal Article
Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm2/V s at 300 K for ion-implanted diamond
RATNIKOVA, A. K, DUKHNOVSKY, M. P, FEDOROV, Yu. Yu, ZEMLYAKOV, V. E, MUCHNIKOV, A. B, VIKHAREV, A. L, GORBACHEV, A. M, RADISHEV, D. B, ALTUKHOV, A. A, MITENKIN, A. V
Published in Diamond and related materials (2011)
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Published in Diamond and related materials (2011)
Journal Article
Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond
Altukhov, A. A., Vikharev, A. L., Gorbachev, A. M., Dukhnovsky, M. P., Zemlyakov, V. E., Ziablyuk, K. N., Mitenkin, A. V., Muchnikov, A. B., Radishev, D. B., Ratnikova, A. K., Fedorov, Yu. Yu
Published in Semiconductors (Woodbury, N.Y.) (01.03.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2011)
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Journal Article